onsemi NGTB25N/NGTB40N Isolated Gate Bipolar Transistors
onsemi NGTB25N and NGTB40N Isolated Gate Bipolar Transistors (IGBT) feature a robust and cost-effective Ultra Field Stop Trench construction. Low switch losses and an ultra-fast recovery diode make them ideal for high frequency solar, UPS and inverter welder applications. Incorporated into these onsemi devices is a soft and fast co-packaged free wheeling diode with a low forward voltage.
Features
- Extremely efficient trench with ultra field stop technology
- TJmax = 175°C
- Soft fast reverse recovery diode
- Optimized for high-speed switching
- Low VCES
- TO247-3 package
- Lead−free
Applications
- Solar inverters
- Uninterruptible power inverter supplies
- Welding
- Motor drive inverters
- Industrial switching
View Results ( 2 ) Page
| 零件編號 | 規格書 | 說明 |
|---|---|---|
| NGTB40N120FL3WG |  |
IGBT IGBT, Ultra Field Stop -1200V 40A |
| NGTB25N120FL3WG | |
IGBT IGBT, Ultra Field Stop - 1200V 25A |
發佈日期: 2016-09-14
| 更新日期: 2022-04-14