onsemi Shielded Gate PowerTrench® MOSFETs
onsemi Shielded Gate PowerTrench® MOSFETs are N-channel and offer optimized switching performance. This MOSFET features a low reverse recovery charge (Qrr) and soft body diode for superior low-noise switching. onsemi Shielded Gate PowerTrench MOSFETs provide high efficiency with lower switching spikes and electromagnetic interference (EMI). They improve the switching Figure of Merit (FOM). Typical applications include synchronous rectification for ATX/server/telecom power-supply units (PSUs), motor drives, uninterruptible power supplies (UPS), and micro solar inverters.
Features
- Shielded gate MOSFET technology
- Optimized switching performance
- 5mΩ (maximum) RDS(on) at VGS = 10V and ID = 97A
- 50% lower Qrr than other MOSFETs
- Lowers switching noise/EMI
- 100% Unclamped Inductive Load (UIL) tested
- 150V drain-to-source voltage (VDSS)
- 139A maximum drain current (ID)
Applications
- Synchronous rectification
- Advanced Technology eXtended (ATX)
- Servers
- Telecom PSU technology
- Motor drives
- UPS
- Micro solar inverter
Related Products
onsemi PowerTrench® MOSFETs
Broad portfolio of N-channel and P-channel versions for low RDS(ON) switching performance.
View Results ( 3 ) Page
| 零件編號 | 規格書 | Id - C連續漏極電流 | Rds On - 漏-源電阻 |
|---|---|---|---|
| NTP011N15MC |  |
74.3 A | 10.9 mOhms |
| NTP5D0N15MC | |
139 A | 5 mOhms |
| NTP7D3N15MC | |
101 A | 7.3 mOhms |
發佈日期: 2020-09-16
| 更新日期: 2024-11-07