Shielded Gate PowerTrench® MOSFETs

onsemi Shielded Gate PowerTrench® MOSFETs are N-channel and offer optimized switching performance. This MOSFET features a low reverse recovery charge (Qrr) and soft body diode for superior low-noise switching. onsemi Shielded Gate PowerTrench MOSFETs provide high efficiency with lower switching spikes and electromagnetic interference (EMI). They improve the switching Figure of Merit (FOM). Typical applications include synchronous rectification for ATX/server/telecom power-supply units (PSUs), motor drives, uninterruptible power supplies (UPS), and micro solar inverters.

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說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
安裝風格
封裝/外殼
晶體管極性
通道數
Vds - 漏-源擊穿電壓
Id - C連續漏極電流
Rds On - 漏-源電阻
Vgs - 閘極-源極電壓
Vgs th - 門源門限電壓
Qg - 閘極充電
最低工作溫度
最高工作溫度
Pd - 功率消耗
通道模式
公司名稱
封裝
onsemi MOSFET MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 10.9 mohm, 74.3 A
規格書
747庫存量
800預期17/4/2026
最少： 1
倍數： 1

Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 74.3 A 10.9 mOhms - 20 V, 20 V 4.5 V 37 nC - 55 C + 175 C 136.4 W Enhancement PowerTrench Tube
onsemi MOSFET MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 5.0 mohm, 139 A
規格書
447庫存量
最少： 1
倍數： 1

Si Through Hole N-Channel 1 Channel 150 V 139 A 5 mOhms - 20 V, 20 V 4.5 V 75 nC - 55 C + 175 C 214 W Enhancement PowerTrench Tube
onsemi NTP7D3N15MC
onsemi MOSFET MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 7.3 mohm, 101 A
規格書
583庫存量
800預期15/5/2026
最少： 1
倍數： 1

Si Through Hole N-Channel 1 Channel 150 V 101 A 7.3 mOhms - 20 V, 20 V 4.5 V 53 nC - 55 C + 175 C 166 W Enhancement PowerTrench Tube