onsemi NTD360N80S3Z SUPERFET® III MOSFET
onsemi NTD360N80S3Z SUPERFET® III MOSFET is optimized for the primary switch of a flyback converter, enabling lower switching losses and case temperature. This MOSFET incorporates an internal Zener diode that improves the ESD capability. onsemi NTD360N80S3Z MOSFET features 800V drain-to-source voltage (VDSS), 360mΩ maximum drain-to-source resistance RDS(on), and 13A maximum drain current (ID). Typical applications include adapters/chargers, LED lighting, AUX power, audio, and industrial power.
Features
- Low switching loss
- High efficiency
- Good EMI performance
- Improved ESD capability with the internal Zener diode
- 360mΩ maximum RDS(on)
- 800V drain-to-source voltage (VDSS)
- 13mA drain current (ID)
- 25.3nC typical ultra-low gate charge (Qg)
- 2.72µJ at 400V low stored energy in the output capacitance (Eoss)
Applications
- Adapters/chargers
- LED lighting
- AUX power
- Audio
- Industrial power
Additional Resource
發佈日期: 2020-09-14
| 更新日期: 2024-06-12