Navitas Semiconductor NV6257 650V Half-Bridge GaNFast™ Power ICs
Navitas Semiconductor NV6257 650V Half-Bridge GaNFast™ Power ICs are designed for high-frequency, soft-switching topologies. The Navitas Semiconductor NV6257 integrates two eMode GaN FETs (275mΩ high-side, 175mΩ low-side) with simple logic inputs, delivering a compact, efficient, and fast powertrain. Featuring industry-leading dV/dt immunity, integrated protection, and a low-profile 6mm x 8mm QFN package, it simplifies GaN technology adoption for designers. Navitas’ GaNFast ICs enhance traditional topologies like flyback, half-bridge, buck/boost, and resonant to MHz+ frequencies, enabling breakthrough designs with exceptional power density and efficiency.Features
- GaNFast power IC
- Two independent logic inputs with hysteresis
- Enable input
- Ultra-low standby current
- Wide VCC range
- Low-side turn-on dV/dt slew rate control
- 200V/ns dV/dt immunity
- ESD, high-side UVLO, shoot-through protection
- Floating high-side with internal level shift
- Integrated high-side bootstrap
- High-frequency operation up to 2MHz
- 650V eMode GaN FETs
- 275mΩ high-side FET
- 175mΩ low-side FET
- Zero reverse recovery charge
- Small, low-profile SMT QFN
- 6mm x8mm footprint
- 0.85mm profile
- Minimized package inductance
Applications
- AC-DC
- DC-DC
- Active Clamp Flyback
- Buck
- Boost
Typical Application Circuit
Videos
發佈日期: 2024-12-31
| 更新日期: 2025-01-29
