Navitas Semiconductor NV6257 650V Half-Bridge GaNFast™ Power ICs

Navitas Semiconductor NV6257 650V Half-Bridge GaNFast™ Power ICs are designed for high-frequency, soft-switching topologies. The Navitas Semiconductor NV6257 integrates two eMode GaN FETs (275mΩ high-side, 175mΩ low-side) with simple logic inputs, delivering a compact, efficient, and fast powertrain. Featuring industry-leading dV/dt immunity, integrated protection, and a low-profile 6mm x 8mm QFN package, it simplifies GaN technology adoption for designers. Navitas’ GaNFast ICs enhance traditional topologies like flyback, half-bridge, buck/boost, and resonant to MHz+ frequencies, enabling breakthrough designs with exceptional power density and efficiency.

Features

  • GaNFast power IC
    • Two independent logic inputs with hysteresis
    • Enable input
    • Ultra-low standby current
    • Wide VCC range
    • Low-side turn-on dV/dt slew rate control
    • 200V/ns dV/dt immunity
    • ESD, high-side UVLO, shoot-through protection
    • Floating high-side with internal level shift
    • Integrated high-side bootstrap
    • High-frequency operation up to 2MHz
  • 650V eMode GaN FETs
    • 275mΩ high-side FET
    • 175mΩ low-side FET
    • Zero reverse recovery charge
  • Small, low-profile SMT QFN
    • 6mm x8mm footprint
    • 0.85mm profile
    • Minimized package inductance

Applications

  • AC-DC
  • DC-DC
  • Active Clamp Flyback
  • Buck
  • Boost

Typical Application Circuit

Application Circuit Diagram - Navitas Semiconductor NV6257 650V Half-Bridge GaNFast™ Power ICs

Videos

發佈日期: 2024-12-31 | 更新日期: 2025-01-29