Navitas Semiconductor NV6169 GaNFast™ Power ICs
Navitas Semiconductor NV6169 GaNFast™ Power ICs combine a high-performance eMode GaN FET with an integrated gate drive for exceptional high-frequency and efficient operation. The Navitas Semiconductor NV6169 features GaNSense™ technology and offers real-time voltage, current, and temperature sensing for enhanced performance and robustness beyond traditional GaN or silicon devices. GaNSense eliminates external current sensing resistors through lossless current sensing, improving efficiency. It also provides short-circuit and over-temperature protection for excellent system reliability and supports auto-standby mode for superior light, tiny, and no-load efficiency. These GaN ICs deliver top-tier dV/dt immunity, high-speed integrated drive, and compact SMT QFN packaging, enabling simple, fast, and reliable design solutions.Features
- GaNFast Power IC
- Monolithically-integrated gate drive
- Wide VCC range (9V to 30V)
- Programmable turn-on dV/dt
- 200V/ns dV/dt immunity
- 800V Transient Voltage Rating
- 650V Continuous Voltage Rating
- Low 45mΩ resistance
- Zero reverse recovery charge
- 2MHz operation
- GaNSense technology
- Integrated loss-less current sensing
- Short-circuit protection
- Over-temperature protection
- Autonomous low-current standby mode
- Auto-standby mode enables input
- Fault output
- Small, low-profile SMT QFN
- 8mm x 8mm footprint, 0.85mm profile
- Minimized package inductance
- Large cooling pad, low thermal resistance
- Sustainability
- RoHS, Pb-free, REACH-compliant
- Up to 40% energy savings vs Si solutions
- System level 4kg CO2 Carbon Footprint reduction
- 20-year limited product warranty
Applications
- AC-DC, DC-DC
- ACF, Buck, Boost, half-bridge, full-bridge, LLC resonant, Class D, PFC, motor drive
- TV SMPS
- Server, telecom
Typical Application Circuits
Videos
發佈日期: 2024-12-31
| 更新日期: 2025-03-17
