IXYS LSIC1MO120G0x N-Channel SiC MOSFETs
IXYS LSIC1MO120G0x N-Channel SiC MOSFETs offer a 1200V drain-source voltage rating, 25mΩ to 160mΩ resistance range, and 14A to 70A currents. These MOSFETs are optimized for high-frequency, high-efficiency applications, and feature ultra-low on-resistance, low gate resistance, and normally-off operations at all temperatures. The IXYS LSIC1MO120G0x N-Channel SiC MOSFETs are ideal for solar inverters, switch-mode power supplies, motor drives, battery chargers, and more.
Features
- Optimized for high-frequency, high-efficiency applications
- Extremely low gate charge and output capacitance
- Low gate resistance for high-frequency switching
- Normally-off operations at all temperatures
- Ultra-low on-resistance
- Optimized package with separate driver source pin
- Lead and halogen free
- RoHS compliant
Applications
- High-frequency applications
- Solar inverters
- Switch-mode power supplies
- Uninterruptible power supplies (UPS)
- Motor drives
- High voltage DC/DC converters
- Battery chargers
- Induction heating
Related MOSFETs
Littelfuse SiC MOSFET
專為高頻、高效應用最佳化。
發佈日期: 2021-07-12
| 更新日期: 2022-03-11