LSIC1MO120G0040

IXYS
576-LSIC1MO120G0040
LSIC1MO120G0040

製造商:

說明:
碳化矽MOSFET SiC MOSFET 1200V 40mO TO247-4L

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 423

庫存:
423 可立即送貨
工廠前置作業時間:
29 週 工廠預計生產時間數量大於所顯示的數量。
數量超過423會受到最小訂單要求的限制。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$242.16 HK$242.16
HK$200.16 HK$2,001.60
HK$183.88 HK$18,388.00

商品屬性 屬性值 選擇屬性
IXYS
產品類型: 碳化矽MOSFET
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
70 A
50 mOhms
- 5 V, + 20 V
4 V
175 nC
- 55 C
+ 175 C
357 W
Enhancement
品牌: IXYS
配置: Single
下降時間: 8 ns
封裝: Tube
產品類型: SiC MOSFETS
上升時間: 9 ns
系列: LSIC1MO120G0xxx
原廠包裝數量: 450
子類別: Transistors
技術: SiC
標準斷開延遲時間: 22 ns
標準開啟延遲時間: 13 ns
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所選屬性: 0

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合規守則
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
原產地分類
原產國:
菲律賓
封裝原產國:
無資料
擴散國:
無資料
出貨時,國家可能會有所變更。

LSIC1MO120G0x N-Channel SiC MOSFETs

IXYS LSIC1MO120G0x N-Channel SiC MOSFETs offer a 1200V drain-source voltage rating, 25mΩ to 160mΩ resistance range, and 14A to 70A currents. These MOSFETs are optimized for high-frequency, high-efficiency applications, and feature ultra-low on-resistance, low gate resistance, and normally-off operations at all temperatures. The IXYS LSIC1MO120G0x N-Channel SiC MOSFETs are ideal for solar inverters, switch-mode power supplies, motor drives, battery chargers, and more.

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