650V CoolSiC™ M1 Trench Power MOSFETs

Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC M1 MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high temperatures and harsh operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency. 

結果: 26
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 432庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 653庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 64 A 30 mOhms - 5 V, + 23 V 5.7 V 67 nC - 55 C + 175 C 300 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 437庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC


Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 753庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 24 A 141 mOhms - 5 V, + 23 V 5.7 V 35 nC - 55 C + 175 C 110 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 1,019庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 45 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 175 C 183 W Enhancement CoolSiC


Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 861庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 33 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 175 C 140 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 434庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 26 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 1,489庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 59 A 34 mOhms - 5 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 335庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 50 A 50 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 176 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 671庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 6 A 346 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 175 C 65 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 1,221庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 132庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 35 A 74 mOhms - 5 V, + 23 V 5.7 V 28 nC - 55 C + 175 C 133 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 55庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 74 mOhms - 5 V, + 23 V 5.7 V 28 nC - 55 C + 175 C 133 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 309庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 111 mOhms - 5 V, + 23 V 5.7 V 19 nC - 55 C + 175 C 104 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 42庫存量
240預期24/8/2026
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC


Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
1,995預期10/9/2026
最少: 1
倍數: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 39 A 74 mOhms - 5 V, + 23 V 5.7 V 28 nC - 55 C + 175 C 161 W Enhancement CoolSiC


Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
1,000預期17/9/2026
最少: 1
倍數: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 17 A 217 mOhms - 5 V, + 23 V 5.7 V 27 nC - 55 C + 175 C 85 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 480庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 58 A 42 mOhms - 5 V, + 23 V 5.7 V 48 nC - 55 C + 175 C 197 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
2,160預期24/8/2026
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 50 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 176 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
473在途量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
235預期27/8/2026
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 53 A 42 mOhms - 5 V, + 23 V 5.7 V 48 nC - 55 C + 175 C 197 W Enhancement


Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 無庫存前置作業時間 52 週
最少: 1,000
倍數: 1,000
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 63 A 42 mOhms - 5 V, + 23 V 5.7 V 49 nC - 55 C + 175 C 234 W Enhancement CoolSiC


Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 無庫存前置作業時間 52 週
最少: 1,000
倍數: 1,000
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 54 A 51 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 211 W Enhancement CoolSiC


Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 無庫存前置作業時間 52 週
最少: 1,000
倍數: 1,000
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 28 A 111 mOhms - 5 V, + 23 V 5.7 V 44 nC - 55 C + 175 C 126 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 無庫存前置作業時間 52 週
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 28 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC