SCT3x 3rd Generation SiC Trench MOSFETs

ROHM Semiconductor SCT3x series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This design results in significantly lower switching loss and faster switching speeds, improving operational efficiency while reducing power loss in a variety of equipment. ROHM Semiconductor SCT3x includes 650V and 1200V variants for broad applicability.

結果: 31
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格
ROHM Semiconductor 碳化矽MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS 1,034庫存量
HK$196.62
HK$124.04
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor 碳化矽MOSFET 1200V 95A 427W SIC 22mOhm TO-247N
199庫存量
HK$1,089.48
HK$1,016.57
最少: 1
倍數: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET 1200V 24A 134W SIC 105mOhm TO-247N
1,619庫存量
HK$176.15
HK$128.73
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET Nch 1200V 95A SiC TO-247N 495庫存量
HK$416.43
HK$354.86
最少: 1
倍數: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 1200V SiC 72A 30mOhm TrenchMOS 683庫存量
HK$671.82
HK$574.91
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor 碳化矽MOSFET 1200V 55A 262W SIC 40mOhm TO-247N
460庫存量
HK$431.06
HK$367.43
HK$357.08
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET 650V 118A 427W SIC 17mOhm TO-247N
351庫存量
HK$1,038.76
HK$960.67
最少: 1
倍數: 1
Through Hole TO-247N-3 1 Channel 650 V 118 A 22.1 mOhms - 4 V, + 22 V 5.6 V 172 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET 650V 70A 262W SIC 30mOhm TO-247N
366庫存量
HK$406.97
HK$337.92
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET 1200V 72A 339W SIC 30mOhm TO-247N
345庫存量
HK$606.88
HK$546.55
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET 650V 30A 134W SIC 80mOhm TO-247N
366庫存量
HK$169.83
HK$121.08
HK$114.83
HK$114.75
最少: 1
倍數: 1
Through Hole TO-247N-3 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET 1200V 31A 165W SIC 80mOhm TO-247N
171庫存量
HK$223.17
HK$156.76
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 2.7 V 60 nC - 55 C + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET 650V 39A 165W SIC 60mOhm TO-247N
428庫存量
HK$214.13
HK$148.78
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET Nch 1200V 24A SiC TO-247N 169庫存量
HK$161.77
HK$134.81
HK$124.62
HK$121.74
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement
ROHM Semiconductor 碳化矽MOSFET 650V 21A 103W SIC 120mOhm TO-247N
450庫存量
HK$78.58
HK$52.77
HK$49.24
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor 碳化矽MOSFET TO247 1.2KV 55A N-CH SIC 61庫存量
HK$442.40
HK$342.28
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A 40 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO247 1.2KV 31A N-CH SIC 150庫存量
HK$156.34
HK$92.56
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO247 650V 39A N-CH SIC 704庫存量
HK$219.39
HK$142.62
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 650 V 39 A 60 mOhms - 4 V, + 22 V 5.6 V 58 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor 碳化矽MOSFET TO247 650V 70A N-CH SIC 195庫存量
HK$423.00
HK$323.95
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 650 V 70 A 30 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor 碳化矽MOSFET 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 529庫存量
HK$177.88
HK$140.81
HK$121.82
HK$115.24
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 650 V 30 A 80 mOhms - 4 V, + 22 V 5.6 V 48 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor 碳化矽MOSFET 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 87庫存量
HK$153.22
HK$117.55
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 24 A 105 mOhms - 4 V, + 22 V 5.6 V 51 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor 碳化矽MOSFET Transistor SiC MOSFET 1200V 160mO 3rd Gen TO-263-7LA 990庫存量
帶狀裁切
HK$81.30
HK$44.80
HK$41.76
捲
HK$39.46
最少: 1
倍數: 1
: 1,000
SMD/SMT TO-263-7LA 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor 碳化矽MOSFET 1200V, 17A, 7-pin SMD, Trench-structure, (SiC) MOSFET 753庫存量
帶狀裁切
HK$79.49
HK$43.73
HK$40.52
捲
HK$38.31
最少: 1
倍數: 1
: 1,000
SMD/SMT TO-263-7LA 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 650V SiC 93A 22mOhm TrenchMOS 198庫存量
HK$461.80
HK$348.20
HK$335.87
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 93 A 28.6 mOhms - 4 V, + 22 V 5.6 V 133 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS 84庫存量
HK$274.79
HK$187.01
HK$182.98
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS 169庫存量
900預期29/10/2026
HK$134.97
HK$76.69
HK$76.61
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement