SiC MOSFETs – Mouser Hong Kong

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CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage V_GS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.

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Part #

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

IMCQ120R004M2HXUMA1
Infineon Technologies
1: HK$599.81
1,367In Stock
1,500On Order
New Product

Mfr. Part No.
IMCQ120R004M2HXUMA1

Mouser Part No
726-IMCQ120R004M2HXU

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Learn More

Datasheet

1,367In Stock

1,500On Order

Cut Tape

HK$599.81

HK$521.07

HK$469.61

HK$435.99

Reel

HK$435.99

MouseReel Available

Min.: 1
Mult.: 1

: 750

SMD/SMT

PG-HDSOP-22-U03

N-Channel

1 Channel

1.2 kV

403 A

10.4 mOhms

- 10 V, 25 V

5.1 V

348 nC

- 55 C

+ 175 C

1.5 kW

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode

IMY120R018CM2HXKSA1
Infineon Technologies
1: HK$163.33
188In Stock
New Product

Mfr. Part No.
IMY120R018CM2HXKSA1

Mouser Part No
726-IMY120R018CM2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode

Learn More

Datasheet

188In Stock

HK$163.33

HK$124.37

HK$103.65

HK$89.35

HK$78.34

Min.: 1
Mult.: 1

Through Hole

PG-TO-247-4

N-Channel

1 Channel

1.2 kV

80 A

23 mOhms

- 10 V, + 25 V

5.1 V

73 nC

- 40 C

+ 175 C

356 W

Enhancement

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode

IMY120R036AM2HXKSA1
Infineon Technologies
1: HK$117.14
215In Stock
New Product

Mfr. Part No.
IMY120R036AM2HXKSA1

Mouser Part No
726-IMY120R036AM2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode

Learn More

Datasheet

215In Stock

HK$117.14

HK$89.19

HK$74.31

HK$66.25

HK$61.90

Min.: 1
Mult.: 1

Through Hole

PG-TO-247-4

N-Channel

1 Channel

1.2 kV

44 A

45 mOhms

- 10 V, + 25 V

5.1 V

37 nC

- 40 C

+ 175 C

171 W

Enhancement

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode

IMY120R036CM2HXKSA1
Infineon Technologies
1: HK$105.54
182In Stock
New Product

Mfr. Part No.
IMY120R036CM2HXKSA1

Mouser Part No
726-IMY120R036CM2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode

Learn More

Datasheet

182In Stock

HK$105.54

HK$58.44

HK$55.65

Min.: 1
Mult.: 1

Through Hole

PG-TO-247-4

N-Channel

1 Channel

1.2 kV

44 A

45 mOhms

- 10 V, + 25 V

5.1 V

37 nC

- 40 C

+ 175 C

250 W

Enhancement

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

IMZC120R007M2HXKSA1
Infineon Technologies
1: HK$340.64
5In Stock
960On Order
New Product

Mfr. Part No.
IMZC120R007M2HXKSA1

Mouser Part No
726-IMZC120R007M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Learn More

Datasheet

5In Stock

960On Order

HK$340.64

HK$259.09

HK$238.22

Min.: 1
Mult.: 1

Through Hole

PG-TO247-4-U07

N-Channel

1 Channel

1.2 kV

201 A

20 mOhms

- 10 V, + 25 V

5.1 V

176 nC

- 55 C

+ 175 C

711 W

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

IMCQ120R010M2HXTMA1
Infineon Technologies
1: HK$247.09
464In Stock
3,000Expected 10/9/2026
New Product

Mfr. Part No.
IMCQ120R010M2HXTMA1

Mouser Part No
726-IMCQ120R010M2HXT

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Learn More

Datasheet

464In Stock

3,000Expected 10/9/2026

Cut Tape

HK$247.09

HK$180.59

HK$175.00

Reel

HK$165.80

Min.: 1
Mult.: 1

: 750

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

IMSQ120R012M2HHXUMA1
Infineon Technologies
1: HK$356.01
586In Stock
New Product

Mfr. Part No.
IMSQ120R012M2HHXUMA1

Mouser Part No
726-IMSQ120R012M2HHX

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Learn More

Datasheet

586In Stock

Cut Tape

HK$356.01

HK$276.36

HK$258.03

Reel

HK$258.03

Min.: 1
Mult.: 1

: 750

1.2 kV

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

IMCQ120R026M2HXTMA1
Infineon Technologies
1: HK$117.71
1,798In Stock
New Product

Mfr. Part No.
IMCQ120R026M2HXTMA1

Mouser Part No
726-IMCQ120R026M2HXT

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Learn More

Datasheet

1,798In Stock

Cut Tape

HK$117.71

HK$82.36

HK$67.73

HK$66.42

Reel

HK$63.29

MouseReel Available

Min.: 1
Mult.: 1

: 750

SMD/SMT

PG-HDSOP-22-U03

N-Channel

1 Channel

1.2 kV

82 A

67 mOhms

- 10 V, + 25 V

5.1 V

63.4 nC

- 55 C

+ 175 C

405 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

IMCQ120R034M2HXTMA1
Infineon Technologies
1: HK$98.06
1,440In Stock
New Product

Mfr. Part No.
IMCQ120R034M2HXTMA1

Mouser Part No
726-IMCQ120R034M2HXT

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Learn More

Datasheet

1,440In Stock

Cut Tape

HK$98.06

HK$66.91

HK$57.21

HK$51.70

Reel

HK$49.65

Min.: 1
Mult.: 1

: 750

SMD/SMT

PG-HDSOP-22-U03

N-Channel

1 Channel

1.2 kV

64 A

89 mOhms

- 10 V, + 25 C

5.1 V

48.7 nC

- 55 C

+ 175 C

326 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

IMCQ120R053M2HXTMA1
Infineon Technologies
1: HK$77.76
330In Stock
750Expected 15/10/2026
New Product

Mfr. Part No.
IMCQ120R053M2HXTMA1

Mouser Part No
726-IMCQ120R053M2HXT

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Learn More

Datasheet

330In Stock

750Expected 15/10/2026

Cut Tape

HK$77.76

HK$51.21

HK$39.46

HK$36.83

Reel

HK$36.83

Min.: 1
Mult.: 1

: 750

SMD/SMT

PG-HDSOP-22-U03

N-Channel

1 Channel

1.2 kV

43 A

138 mOhms

- 10 V, + 25 V

5.1 V

32.8 nC

- 55 C

+ 175 C

234 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

IMCQ120R078M2HXTMA1
Infineon Technologies
1: HK$68.23
856In Stock
New Product

Mfr. Part No.
IMCQ120R078M2HXTMA1

Mouser Part No
726-IMCQ120R078M2HXT

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Learn More

Datasheet

856In Stock

Cut Tape

HK$68.23

HK$46.36

HK$33.95

HK$33.13

Reel

HK$30.99

Min.: 1
Mult.: 1

: 750

SMD/SMT

PG-HDSOP-22-U03

N-Channel

1 Channel

1.2 kV

31 A

205 mOhms

- 10 V, + 25 V

5.1 V

23.2 nC

- 55 C

+ 175 C

176 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

IMSQ120R026M2HHXUMA1
Infineon Technologies
1: HK$196.29
692In Stock
New Product

Mfr. Part No.
IMSQ120R026M2HHXUMA1

Mouser Part No
726-IMSQ120R026M2HHX

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Learn More

Datasheet

692In Stock

Cut Tape

HK$196.29

HK$141.55

HK$130.78

HK$122.15

Reel

HK$122.15

Min.: 1
Mult.: 1

: 750

1.2 kV

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

IMSQ120R040M2HHXUMA1
Infineon Technologies
1: HK$155.52
660In Stock
New Product

Mfr. Part No.
IMSQ120R040M2HHXUMA1

Mouser Part No
726-IMSQ120R040M2HHX

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Learn More

Datasheet

660In Stock

Cut Tape

HK$155.52

HK$110.64

HK$97.16

HK$90.67

Reel

HK$90.67

Min.: 1
Mult.: 1

: 750

1.2 kV

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

IMSQ120R053M2HHXUMA1
Infineon Technologies
1: HK$131.52
199In Stock
750Expected 19/11/2026
New Product

Mfr. Part No.
IMSQ120R053M2HHXUMA1

Mouser Part No
726-IMSQ120R053M2HHX

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Learn More

Datasheet

199In Stock

750Expected 19/11/2026

Cut Tape

HK$131.52

HK$92.64

HK$87.79

HK$73.08

Reel

HK$73.08

Min.: 1
Mult.: 1

: 750

1.2 kV

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2

IMZA120R012M2HXKSA1
Infineon Technologies
1: HK$218.90
115In Stock
240Expected 17/9/2026
New Product

Mfr. Part No.
IMZA120R012M2HXKSA1

Mouser Part No
726-IMZA120R012M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2

Learn More

Datasheet

115In Stock

240Expected 17/9/2026

HK$218.90

HK$140.23

Min.: 1
Mult.: 1

Through Hole

PG-TO247-4-U02

N-Channel

1 Channel

1.2 kV

16 mOhms

- 10 V, + 25 V

5.1 V

124 nC

- 55 C

+ 175 C

480 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2

IMZA120R022M2HXKSA1
Infineon Technologies
1: HK$141.71
341In Stock
New Product

Mfr. Part No.
IMZA120R022M2HXKSA1

Mouser Part No
726-IMZA120R022M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2

Learn More

Datasheet

341In Stock

HK$141.71

HK$87.38

HK$80.47

Min.: 1
Mult.: 1

Through Hole

PG-TO247-4-U02

N-Channel

1 Channel

1.2 kV

80 A

29 mOhms

- 10 V, + 25 V

5.1 V

71 nC

- 55 C

+ 175 C

329 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2

IMZA120R040M2HXKSA1
Infineon Technologies
1: HK$98.15
352In Stock
New Product

Mfr. Part No.
IMZA120R040M2HXKSA1

Mouser Part No
726-IMZA120R040M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2

Learn More

Datasheet

352In Stock

HK$98.15

HK$58.61

HK$49.98

Min.: 1
Mult.: 1

Through Hole

PG-TO247-4-U02

N-Channel

1 Channel

1.2 kV

48 A

51 mOhms

- 10 V, + 25 V

5.1 V

39 nC

- 55 C

+ 175 C

218 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 12 mohm G2

IMZC120R012M2HXKSA1
Infineon Technologies
1: HK$218.90
625In Stock
240Expected 5/11/2026
New Product

Mfr. Part No.
IMZC120R012M2HXKSA1

Mouser Part No
726-IMZC120R012M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 12 mohm G2

Learn More

Datasheet

625In Stock

240Expected 5/11/2026

HK$218.90

HK$140.23

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

1.2 kV

129 A

12 mOhms

- 10 V, + 25 V

5.1 V

124 nC

- 55 C

+ 175 C

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 17 mohm G2

IMZC120R017M2HXKSA1
Infineon Technologies
1: HK$171.63
579In Stock
New Product

Mfr. Part No.
IMZC120R017M2HXKSA1

Mouser Part No
726-IMZC120R017M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 17 mohm G2

Learn More

Datasheet

579In Stock

HK$171.63

HK$123.96

HK$107.68

HK$102.83

Quote

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

1.2 kV

97 A

17 mOhms

- 10 V, + 25 V

5.1 V

89 nC

- 55 C

+ 175 C

382 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 22 mohm G2

IMZC120R022M2HXKSA1
Infineon Technologies
1: HK$152.32
1,397In Stock
New Product

Mfr. Part No.
IMZC120R022M2HXKSA1

Mouser Part No
726-IMZC120R022M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 22 mohm G2

Learn More

Datasheet

1,397In Stock

HK$152.32

HK$104.89

HK$90.58

HK$84.42

HK$80.47

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

1.2 kV

80 A

22 mOhms

- 10 V, + 25 V

5.1 V

71 nC

- 55 C

+ 175 C

329 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 26 mohm G2

IMZC120R026M2HXKSA1
Infineon Technologies
1: HK$126.59
320In Stock
New Product

Mfr. Part No.
IMZC120R026M2HXKSA1

Mouser Part No
726-IMZC120R026M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 26 mohm G2

Learn More

Datasheet

320In Stock

HK$126.59

HK$89.76

HK$76.12

HK$66.91

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

1.2 kV

69 A

25 mOhms

- 10 V, + 25 V

5.1 V

124 nC

- 55 C

+ 175 C

289 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 34 mohm G2

IMZC120R034M2HXKSA1
Infineon Technologies
1: HK$103.08
961In Stock
New Product

Mfr. Part No.
IMZC120R034M2HXKSA1

Mouser Part No
726-IMZC120R034M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 34 mohm G2

Learn More

Datasheet

961In Stock

HK$103.08

HK$61.90

HK$53.27

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

1.2 kV

55 A

- 10 V, + 25 V

5.1 V

45 nC

- 55 C

+ 175 C

244 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 53 mohm G2

IMZC120R053M2HXKSA1
Infineon Technologies
1: HK$83.52
687In Stock
New Product

Mfr. Part No.
IMZC120R053M2HXKSA1

Mouser Part No
726-IMZC120R053M2HXK

New Product

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET discrete 1200V, 53 mohm G2

Learn More

Datasheet

687In Stock

HK$83.52

HK$49.24

HK$41.68

HK$41.59

HK$40.44

Min.: 1
Mult.: 1

Through Hole

TO-247-4

N-Channel

1 Channel

1.2 kV

38 A

53 mOhms

- 10 V, + 25 V

5.1 V

30 nC

- 55 C

+ 175 C

182 W

Enhancement

CoolSiC

SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package

IMBG120R008M2HXTMA1
Infineon Technologies
1: HK$296.50
933In Stock
1,000Expected 15/10/2026

Mfr. Part No.
IMBG120R008M2HXTMA1

Mouser Part No
726-IMBG120R008M2HXT

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package

Learn More

Datasheet

933In Stock

1,000Expected 15/10/2026

Cut Tape

HK$296.50

HK$222.60

HK$222.52

HK$210.60

Reel

HK$207.88

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

TO-263-7

N-Channel

1 Channel

1.2 kV

189 A

7.7 mOhms

- 7 V, + 20 V

5.1 V

195 nC

- 55 C

+ 175 C

800 W

Enhancement

SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package

IMBG120R017M2HXTMA1
Infineon Technologies
1: HK$158.15
3,134In Stock

Mfr. Part No.
IMBG120R017M2HXTMA1

Mouser Part No
726-IMBG120R017M2HXT

Infineon Technologies

SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package

Learn More

Datasheet

3,134In Stock

Cut Tape

HK$158.15

HK$112.70

HK$100.45

HK$99.71

Reel

HK$92.64

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

TO-263-7

N-Channel

1 Channel

1.2 kV

107 A

17.1 mOhms

- 7 V, + 20 V

5.1 V

89 nC

- 55 C

+ 175 C

470 W

Enhancement

CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

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8.1 A
14.9 A
21.2 A
28 A
29 A
31 A
38 A
41 A
43 A
44 A
48 A
52 A
55 A
56 A
64 A
69 A
75 A
80 A
82 A
87 A

7.5 mOhms
7.7 mOhms
10.4 mOhms
12 mOhms
12.2 mOhms
13.6 mOhms
16 mOhms
17 mOhms
17.1 mOhms
20 mOhms
21.6 mOhms
22 mOhms
23 mOhms
25 mOhms
25.4 mOhms
29 mOhms
34 mOhms
39.6 mOhms
40 mOhms
45 mOhms

7.9 nC
8.1 nC
9.7 nC
14.4 nC
20.6 nC
21 nC
23.2 nC
30 nC
32.8 nC
37 nC
39 nC
42.4 nC
45 nC
48.7 nC
60 nC
63.4 nC
71 nC
73 nC
89 nC
124 nC

80 W
94 W
123 W
143 W
158 W
171 W
176 W
182 W
205 W
218 W
234 W
244 W
250 W
288 W
289 W
326 W
329 W
335 W
356 W
382 W