住宅用能源儲存系統 (ESS)

英飛凌住宅用能源儲存系統 (ESS) 提供多樣化的產品,能協助您以最佳化的成本,打造及管理彈性的能源基礎架構。ESS有兩種主要的使用案例。第一種是打造獨立於公用事業、以太陽能供電的住家(住宅用ESS)。第二種則屬於大規模,在高用電需求時用於輔助公用事業的發電(公用事業級的ESS)。

結果: 24
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
Infineon Technologies MOSFET IFX FET >150 - 400V 603庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 88 A 9.8 mOhms - 20 V, 20 V 2.2 V 76 nC - 55 C + 150 C 250 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,497庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 600 V 13 A 40 mOhms - 20 V, 20 V 4.5 V 83 nC - 55 C + 150 C 245 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 2,000庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 33 A 75 mOhms - 20 V, 20 V 4 V 51 nC - 55 C + 150 C 188 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >100-150V 12,827庫存量
最少: 1
倍數: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 150 V 87 A 9.3 mOhms - 20 V, 20 V 3 V 33 nC - 55 C + 150 C 139 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 100V 180A D2PAK-2 13,872庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 180 A 1.7 mOhms - 20 V, 20 V 2.2 V 168 nC - 55 C + 175 C 375 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 100V 120A D2PAK-2 6,598庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 120 A 1.7 mOhms - 20 V, 20 V 2.2 V 210 nC - 55 C + 175 C 375 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET DIFFERENTIATED MOSFETS 5,565庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 120 A 1.7 mOhms - 20 V, 20 V 2.2 V 210 nC - 55 C + 175 C 375 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 100V 300A HSOF-8 12,622庫存量
8,000預期2/3/2026
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 100 V 300 A 1.5 mOhms - 20 V, 20 V 2.2 V 169 nC - 55 C + 175 C 375 W Enhancement OptiMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 1,702庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 109 A 17 mOhms - 20 V, 20 V 3 V 240 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET IFX FET >100-150V 1,070庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 150 V 120 A 3.7 mOhms - 20 V, 20 V 3 V 100 nC - 55 C + 175 C 300 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >100-150V 3,493庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 150 V 120 A 3.9 mOhms - 20 V, 20 V 3.3 V 84 nC - 55 C + 150 C 313 W Enhancement OptiMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 465庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 55 mOhms - 20 V, 20 V 3.5 V 79 nC - 55 C + 150 C 178 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,784庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 33 A 66 mOhms - 20 V, 20 V 3.5 V 67 nC - 40 C + 150 C 189 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET N-Ch 80V 300A HSOF-8 3,350庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 80 V 300 A 1.2 mOhms - 20 V, 20 V 2.2 V 178 nC - 55 C + 175 C 375 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >100-150V 1,697庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 150 V 155 A 5.9 mOhms - 20 V, 20 V 2 V 69 nC - 55 C + 175 C 375 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >100-150V 1,157庫存量
2,000預期9/4/2026
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 150 V 155 A 5.9 mOhms - 20 V, 20 V 2 V 69 nC - 55 C + 175 C 375 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 740庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 600 V 52 A 45 mOhms - 20 V, 20 V 4 V 79 nC - 55 C + 150 C 270 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 806庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 63 A 26 mOhms - 20 V, 20 V 3.5 V 141 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 727庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 40 mOhms - 20 V, 20 V 3.5 V 109 nC - 55 C + 150 C 227 W Enhancement Tube
Infineon Technologies MOSFET LOW POWER_NEW 2,153庫存量
最少: 1
倍數: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 950 V 2 A 3.7 Ohms - 20 V, 20 V 2.5 V 6 nC - 55 C + 150 C 22 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 3,000庫存量
最少: 1
倍數: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 1.5 A 4.5 Ohms - 30 V, 30 V 3 V 4 nC - 50 C + 150 C 13 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW
4,000預期27/8/2026
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 67 A 35 mOhms - 20 V, 20 V 4 V 109 nC - 55 C + 150 C 351 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW
2,999預期5/3/2026
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 25 A 95 mOhms - 20 V, 20 V 3.5 V 51 nC - 40 C + 150 C 147 W Enhancement Reel, Cut Tape

Infineon Technologies MOSFET HIGH POWER_NEW
1,520預期26/3/2026
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 34 mOhms - 20 V, 20 V 3 V 107 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube