|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMZA65R107M1HXKSA1
- Infineon Technologies
-
1:
HK$37.48
-
444庫存量
|
Mouser 元件編號
726-IMZA65R107M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
444庫存量
|
|
|
HK$37.48
|
|
|
HK$26.96
|
|
|
HK$24.41
|
|
|
HK$21.95
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
142 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
15 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R030M1HXKSA1
- Infineon Technologies
-
1:
HK$96.09
-
176庫存量
-
240預期4/3/2026
|
Mouser 元件編號
726-IMW120R030M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
176庫存量
240預期4/3/2026
|
|
|
HK$96.09
|
|
|
HK$69.21
|
|
|
HK$62.31
|
|
|
HK$62.23
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R090M1HXKSA1
- Infineon Technologies
-
1:
HK$60.66
-
1,180庫存量
|
Mouser 元件編號
726-IMW120R090M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
1,180庫存量
|
|
|
HK$60.66
|
|
|
HK$37.89
|
|
|
HK$31.98
|
|
|
HK$31.89
|
|
|
HK$28.93
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
26 A
|
117 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
21 nC
|
- 55 C
|
+ 150 C
|
115 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R220M1HXKSA1
- Infineon Technologies
-
1:
HK$44.14
-
1,004庫存量
|
Mouser 元件編號
726-IMW120R220M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
1,004庫存量
|
|
|
HK$44.14
|
|
|
HK$28.11
|
|
|
HK$23.43
|
|
|
HK$20.63
|
|
|
HK$20.06
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
13 A
|
289 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
8.5 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
HK$121.82
-
840庫存量
|
Mouser 元件編號
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
840庫存量
|
|
|
HK$121.82
|
|
|
HK$81.62
|
|
|
HK$72.91
|
|
|
HK$72.83
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMZA65R027M1HXKSA1
- Infineon Technologies
-
1:
HK$108.75
-
222庫存量
-
720預期30/7/2026
|
Mouser 元件編號
726-IMZA65R027M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
222庫存量
720預期30/7/2026
|
|
|
HK$108.75
|
|
|
HK$66.01
|
|
|
HK$57.95
|
|
|
HK$55.24
|
|
|
報價
|
|
|
報價
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
59 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
HK$67.90
-
332庫存量
|
Mouser 元件編號
726-IMZA65R048M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
332庫存量
|
|
|
HK$67.90
|
|
|
HK$43.07
|
|
|
HK$36.91
|
|
|
HK$34.85
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
HK$104.64
-
95庫存量
-
240預期24/2/2026
|
Mouser 元件編號
726-IMW65R027M1HXKSA
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
95庫存量
240預期24/2/2026
|
|
|
HK$104.64
|
|
|
HK$63.38
|
|
|
HK$54.33
|
|
|
HK$53.92
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
HK$39.05
-
572庫存量
-
4,000預期2/3/2026
|
Mouser 元件編號
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
572庫存量
4,000預期2/3/2026
|
|
|
HK$39.05
|
|
|
HK$25.81
|
|
|
HK$19.40
|
|
|
HK$17.59
|
|
|
HK$14.47
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R450M1XTMA1
- Infineon Technologies
-
1:
HK$53.18
-
115庫存量
-
1,250預期19/3/2026
|
Mouser 元件編號
726-IMBF170R450M1XTM
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
115庫存量
1,250預期19/3/2026
|
|
|
HK$53.18
|
|
|
HK$35.76
|
|
|
HK$26.06
|
|
|
HK$22.77
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
9.8 A
|
450 mOhms
|
- 10 V, + 20 V
|
4.5 V
|
11 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R060M1HXKSA1
- Infineon Technologies
-
1:
HK$76.28
-
255庫存量
-
240預期30/7/2026
|
Mouser 元件編號
726-IMW120R060M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
255庫存量
240預期30/7/2026
|
|
|
HK$76.28
|
|
|
HK$44.96
|
|
|
HK$38.14
|
|
|
HK$35.67
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
78 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
31 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
HK$56.39
-
422庫存量
|
Mouser 元件編號
726-IMW120R140M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
422庫存量
|
|
|
HK$56.39
|
|
|
HK$32.47
|
|
|
HK$27.13
|
|
|
HK$23.84
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R350M1HXKSA1
- Infineon Technologies
-
1:
HK$44.06
-
68庫存量
-
240預期16/2/2026
|
Mouser 元件編號
726-IMW120R350M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
68庫存量
240預期16/2/2026
|
|
|
HK$44.06
|
|
|
HK$26.88
|
|
|
HK$22.44
|
|
|
HK$18.50
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
4.7 A
|
455 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
5.3 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMW65R072M1HXKSA1
- Infineon Technologies
-
1:
HK$59.27
-
200庫存量
|
Mouser 元件編號
726-IMW65R072M1HXKSA
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
200庫存量
|
|
|
HK$59.27
|
|
|
HK$31.07
|
|
|
HK$28.19
|
|
|
HK$28.11
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
26 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMW65R107M1HXKSA1
- Infineon Technologies
-
1:
HK$47.51
-
151庫存量
|
Mouser 元件編號
726-IMW65R107M1HXKSA
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
151庫存量
|
|
|
HK$47.51
|
|
|
HK$27.62
|
|
|
HK$24.91
|
|
|
HK$22.19
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
142 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
15 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R060M1HXKSA1
- Infineon Technologies
-
1:
HK$79.90
-
58庫存量
-
960預期11/6/2026
|
Mouser 元件編號
726-IMZ120R060M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
58庫存量
960預期11/6/2026
|
|
|
HK$79.90
|
|
|
HK$53.35
|
|
|
HK$48.17
|
|
|
HK$44.72
|
|
|
HK$40.03
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
78 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
31 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R140M1HXKSA1
- Infineon Technologies
-
1:
HK$63.05
-
159庫存量
-
240預期4/3/2026
|
Mouser 元件編號
726-IMZ120R140M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
159庫存量
240預期4/3/2026
|
|
|
HK$63.05
|
|
|
HK$44.47
|
|
|
HK$37.07
|
|
|
HK$33.04
|
|
|
HK$29.43
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
13 nC
|
- 55 C
|
+ 150 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R220M1HXKSA1
- Infineon Technologies
-
1:
HK$54.50
-
40庫存量
-
480預期5/8/2026
|
Mouser 元件編號
726-IMZ120R220M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
40庫存量
480預期5/8/2026
|
|
|
HK$54.50
|
|
|
HK$31.24
|
|
|
HK$25.65
|
|
|
HK$23.10
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
13 A
|
220 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
8.5 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V in TO247-4 package
- IMZ120R350M1HXKSA1
- Infineon Technologies
-
1:
HK$41.92
-
421庫存量
|
Mouser 元件編號
726-IMZ120R350M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V in TO247-4 package
|
|
421庫存量
|
|
|
HK$41.92
|
|
|
HK$24.17
|
|
|
HK$20.71
|
|
|
HK$19.40
|
|
|
HK$18.99
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
4.7 A
|
350 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
5.3 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R650M1XTMA1
- Infineon Technologies
-
1:
HK$42.74
-
1,974在途量
|
Mouser 元件編號
726-IMBF170R650M1XTM
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
1,974在途量
在途量:
974 預期28/5/2026
1,000 預期11/6/2026
|
|
|
HK$42.74
|
|
|
HK$29.59
|
|
|
HK$21.45
|
|
|
HK$20.71
|
|
|
HK$18.00
|
|
最少: 1
倍數: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
7.4 A
|
650 mOhms
|
- 10 V, + 20 V
|
4.5 V
|
8 nC
|
- 55 C
|
+ 175 C
|
88 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMW65R048M1HXKSA1
- Infineon Technologies
-
1:
HK$67.57
-
480預期16/6/2026
|
Mouser 元件編號
726-IMW65R048M1HXKSA
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
480預期16/6/2026
|
|
|
HK$67.57
|
|
|
HK$40.61
|
|
|
HK$36.58
|
|
|
HK$33.95
|
|
|
HK$33.37
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R090M1HXKSA1
- Infineon Technologies
-
1:
HK$70.69
-
446預期16/2/2026
|
Mouser 元件編號
726-IMZ120R090M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
446預期16/2/2026
|
|
|
HK$70.69
|
|
|
HK$51.38
|
|
|
HK$42.83
|
|
|
HK$38.14
|
|
|
HK$34.03
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
26 A
|
117 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
21 nC
|
- 55 C
|
+ 150 C
|
115 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
HK$60.75
-
無庫存前置作業時間 11 週
|
Mouser 元件編號
726-IMZA65R072M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
無庫存前置作業時間 11 週
|
|
|
HK$60.75
|
|
|
HK$35.18
|
|
|
HK$28.85
|
|
|
HK$26.39
|
|
|
報價
|
|
|
報價
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|