Industrial Product Solutions

ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discrete to ICs and modules, providing total solutions at the system level. The ROHM Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over ten years), creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.

結果: 10
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式
ROHM Semiconductor 碳化矽MOSFET N-Ch 650V 30A Silicon Carbide SiC 971庫存量
最少: 1
倍數: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 1200V SiC 72A 30mOhm TrenchMOS 695庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor 碳化矽MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC 1,463庫存量
最少: 1
倍數: 1

Through Hole TO-3PFM-3 N-Channel 1 Channel 1.7 kV 3.7 A 1.5 Ohms - 6 V, + 22 V 4 V 14 nC - 55 C + 175 C 35 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS 102庫存量
最少: 1
倍數: 1
Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 1200V SiC 55A 40mOhm TrenchMOS 322庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS 779庫存量
最少: 1
倍數: 1
Through Hole TO-247-3 N-Channel 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS 297庫存量
900預期24/2/2026
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 31 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 650V SiC 93A 22mOhm TrenchMOS 6庫存量
450預期25/6/2026
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 93 A 28.6 mOhms - 4 V, + 22 V 5.6 V 133 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS 92庫存量
450預期20/5/2026
最少: 1
倍數: 1
Through Hole TO-247-3 N-Channel 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement
ROHM Semiconductor 碳化矽MOSFET N-Ch 1200V SiC 17A 160mOhm TrenchMOS 23庫存量
1,350在途量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 103 W Enhancement