Switch Mode Power Supplies - High Power Topology

Infineon Technologies Switch Mode Power Supplies - High Power Topology is suitable for power applications above 400W. Following the front end stage of an AC/DC rectifier, a DC/DC power converter is required to step down the bus voltage and provide a galvanically isolated and tightly regulated DC output (12V, 24V, 48V). While a wide range of isolated topologies are available, the phase-shifted full-bridge converter is more suitable for higher power applications for reasons such as its inherent zero-voltage Switching for the primary side switches.

結果: 4
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說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
安裝風格
封裝/外殼
晶體管極性
通道數
Vds - 漏-源擊穿電壓
Id - C連續漏極電流
Rds On - 漏-源電阻
Vgs - 閘極-源極電壓
Vgs th - 門源門限電壓
Qg - 閘極充電
最低工作溫度
最高工作溫度
Pd - 功率消耗
通道模式
公司名稱
封裝

Infineon Technologies MOSFET N-Ch 600V 39A TO247-3 CoolMOS CP
規格書
271庫存量
最少： 1
倍數： 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 39 A 68 mOhms - 20 V, 20 V 2.5 V 116 nC - 55 C + 150 C 313 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP
規格書
208庫存量
最少： 1
倍數： 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 60 A 40 mOhms - 20 V, 20 V 2.5 V 190 nC - 55 C + 150 C 431 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3
規格書
644庫存量
最少： 1
倍數： 1

Si Through Hole TO-220-3 N-Channel 1 Channel 75 V 120 A 2.1 mOhms - 20 V, 20 V 2.3 V 206 nC - 55 C + 175 C 300 W Enhancement OptiMOS Tube

Infineon Technologies MOSFET N-Ch 650V 25A TO247-3 CoolMOS CP
規格書
121庫存量
最少： 1
倍數： 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 110 mOhms - 20 V, 20 V 2.5 V 70 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube