1200V Trench XPT™ IGBTs with Sonic Diodes

Littelfuse 1200V Trench XPT™ Insulated-gate Bipolar Transistors (IGBTs) with Sonic Diodes are developed using XPT thin-wafer technology and Trench IGBT processes. The transistors feature reduced thermal resistance and are optimized for low switching loss. Littelfuse 1200V Trench XPT IGBTs with Sonic Diodes offer a high current handling capacity, high power density, and an anti-parallel sonic diode. These Trench XPT transistors are ideal for power inverter, motor drive, power factor correction (PFC) circuit, and battery charger applications.

結果: 3
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 產品 配置 集電極-發射極最大電壓VCEO 集電極-發射極飽和電壓 連續集電極電流在25 C 柵射極漏電電流 Pd - 功率消耗 封裝/外殼 最低工作溫度 最高工作溫度 封裝
IXYS IGBT 模組 IXYN110N120B4H1 256庫存量
最少: 1
倍數: 1

IGBT Modules Copack (Sonic-FRD) 1.2 kV 1.66 V 218 A 100 nA 830 W SOT-227B - 55 C + 175 C Tube
IXYS IGBT 模組 IXYN110N120C4H1 139庫存量
最少: 1
倍數: 1

IGBT Modules Copack (Sonic-FRD) 1.2 kV 1.9 V 210 A 100 nA 830 W SOT-227B - 55 C + 175 C Tube
IXYS IGBT 模組 IXYN85N120C4H1 367庫存量
最少: 1
倍數: 1

IGBT Modules Copack (Sonic-FRD) 1.2 kV 2 V 150 A 100 nA 600 W SOT-227B - 55 C + 175 C Tube