HiPerFET and MOSFET Power Devices

IXYS HiPerFET and MOSFET Power Devices are available in the SMPD package, which is much lighter (typically by 50%) than comparable conventional power modules. This enables the designer to create lower-weight power systems. Due to its compact and ultra-low profile package, it is possible to use the same heat sink for multiple devices, which saves PCB space. An added benefit of being smaller and lighter is that it provides better protection against vibrations and g-forces, especially if used in portable appliances. This benefit also increases the life expectancy and reliability of the devices.

結果: 4
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 最低工作溫度 最高工作溫度 Pd - 功率消耗 系列 封裝
IXYS MMIX1F210N30P3
IXYS MOSFET模組 SMPD 300V 108A N-CH POLAR3 260庫存量
最少: 1
倍數: 1

Si SMD/SMT N-Channel 300 V 108 A 16 mOhms - 20 V, + 20 V 2.5 V - 55 C + 150 C 520 W HiPerFET Tube
IXYS MOSFET模組 24SMPD N-CH 75V 500A
1,131預期23/4/2026
最少: 1
倍數: 1

Si SMD/SMT SMPD-24 N-Channel 1 Channel 75 V 500 A 1.6 mOhms - 20 V, + 20 V 2.5 V - 55 C + 175 C 830 W HiPerFET Tube
IXYS MMIX1T660N04T4
IXYS MOSFET模組 Disc MSFT SMPD Pkg-HiPerFETMSFT SMPD-B 暫無庫存
最少: 1
倍數: 1

Si SMD/SMT N-Channel 40 V 660 A 850 uOhms - 15 V, + 15 V 2 V - 55 C + 175 C 830 W HiPerFET Tube
IXYS MMIX2F60N50P3
IXYS MOSFET模組 SMPD 500V 30A N-CH POLAR3 無庫存前置作業時間 26 週
最少: 300
倍數: 20

Si SMD/SMT N-Channel 500 V 30 A 120 mOhms - 30 V, + 30 V 3 V - 55 C + 150 C 320 W HiPerFET Tube