Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.

結果: 45
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Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2472L
500預期14/8/2026
最少: 1
倍數: 1

Through Hole TO-247AD-2 Single 10 A 1.2 kV 1.34 V 50 A 162 uA - 55 C + 175 C VS-4C10EP12LHM3
Vishay Semiconductors 碳化矽肖特基二極管 SiCG4D2PAK2L
800預期14/8/2026
最少: 1
倍數: 1

SMD/SMT TO-263AB-2 Single 12 A 650 V 1.3 V 72 A 84 uA -55 C + 175 C VS-4C12ET07S2LHM3
Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2202L
1,000預期14/8/2026
最少: 1
倍數: 1

Through Hole TO-220AC-2 Single 12 A 650 V 1.3 V 72 A 84 uA -55 C + 175 C VS-4C12ET07THM3
Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2472L
500預期14/8/2026
最少: 1
倍數: 1

Through Hole TO-247AD-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15EP12L-M3
Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2472L
500預期14/8/2026
最少: 1
倍數: 1

Through Hole TO-247AD-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15EP12LHM3
Vishay Semiconductors 碳化矽肖特基二極管 SiCG4D2PAK2L
800預期14/8/2026
最少: 1
倍數: 1

SMD/SMT TO-263AB-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12S2L-M3
Vishay Semiconductors 碳化矽肖特基二極管 SiCG4D2PAK2L
800預期14/8/2026
最少: 1
倍數: 1

SMD/SMT TO-263AB-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12S2LHM3
Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2202L
1,000預期14/8/2026
最少: 1
倍數: 1

Through Hole TO-220AC-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12T-M3
Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2202L
1,000預期14/8/2026
最少: 1
倍數: 1

Through Hole TO-220AC-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12THM3
Vishay Semiconductors 碳化矽肖特基二極管 SiCG4D2PAK2L
800預期14/8/2026
最少: 1
倍數: 1

SMD/SMT TO-263AB-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C16ET07S2L-M3
Vishay Semiconductors 碳化矽肖特基二極管 SiCG4D2PAK2L
800預期14/8/2026
最少: 1
倍數: 1

SMD/SMT TO-263AB-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C16ET07S2LHM3
Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2202L
1,000預期14/8/2026
最少: 1
倍數: 1

Through Hole TO-220AC-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C16ET07T-M3
Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2202L
1,000預期14/8/2026
最少: 1
倍數: 1

Through Hole TO-220AC-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C16ET07THM3
Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2473L
500預期16/3/2026
最少: 1
倍數: 1

Through Hole TO-247AD-3 Common Cathode 10 A 650 V 1.3 V 60 A 50 uA - 55 C + 175 C VS-4C20CP07LHM3
Vishay Semiconductors 碳化矽肖特基二極管 SiCG4D2PAK2L
800預期16/3/2026
最少: 1
倍數: 1

SMD/SMT TO-263AB-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07S2L-M3
Vishay Semiconductors 碳化矽肖特基二極管 SiCG4D2PAK2L
800預期16/3/2026
最少: 1
倍數: 1

SMD/SMT TO-263AB-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07S2LHM3
Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2202L
1,000預期16/3/2026
最少: 1
倍數: 1

Through Hole TO-220AC-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07T-M3
Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2202L
1,000預期16/3/2026
最少: 1
倍數: 1

Through Hole TO-220AC-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07THM3
Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2473L
500預期14/8/2026
最少: 1
倍數: 1

Through Hole TO-247AD-3 Common Cathode 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C30CP07L-M3
Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2473L
490預期14/8/2026
最少: 1
倍數: 1

Through Hole TO-247AD-3 Common Cathode 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C30CP07LHM3
Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2473L
500預期16/3/2026
最少: 1
倍數: 1

Through Hole TO-247AD-3 Single 30 A 650 V 1,33 V 180 A 125 uA - 55 C + 175 C VS-4C30E3P07L-M3
Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2472L
465預期14/8/2026
最少: 1
倍數: 1

Through Hole TO-247AD-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C VS-4C30EP12L-M3
Vishay Semiconductors 碳化矽肖特基二極管 SicG4TO-2472L
500預期14/8/2026
最少: 1
倍數: 1

Through Hole TO-247AD-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C VS-4C30EP12LHM3
Vishay Semiconductors 碳化矽肖特基二極管 SiCG4D2PAK2L
800預期6/3/2026
最少: 1
倍數: 1

SMD/SMT TO-263AB-2 SIngle 30 A 650 V 1.33 V 180 A 125 uA - 55 C + 175 C VS-4C30ET07S2L-M3
Vishay Semiconductors 碳化矽肖特基二極管 SiCG4D2PAK2L
800預期16/3/2026
最少: 1
倍數: 1

SMD/SMT TO-263AB-2 SIngle 30 A 650 V 1.33 V 180 A 125 uA - 55 C + 175 C VS-4C30ET07S2LHM3