|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
HK$170.57
-
640庫存量
-
新產品
|
Mouser 元件編號
511-SCT012W90G3-4AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
640庫存量
|
|
|
HK$170.57
|
|
|
HK$145.41
|
|
|
HK$125.77
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
HK$148.37
-
502庫存量
-
新產品
|
Mouser 元件編號
511-SCT025W120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
502庫存量
|
|
|
HK$148.37
|
|
|
HK$118.78
|
|
|
HK$102.67
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
HK$199.17
-
600預期27/7/2026
|
Mouser 元件編號
511-SCT015W120G3-4AG
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
600預期27/7/2026
|
|
|
HK$199.17
|
|
|
HK$163.00
|
|
|
HK$143.93
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
HK$93.54
-
100在途量
-
新產品
|
Mouser 元件編號
511-SCT040W120G3-4
新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
|
|
100在途量
|
|
|
HK$93.54
|
|
|
HK$76.20
|
|
|
HK$63.46
|
|
|
HK$56.55
|
|
|
HK$48.00
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
- SCT019W120G3-4AG
- STMicroelectronics
-
600:
HK$105.54
-
無庫存前置作業時間 17 週
-
新產品
|
Mouser 元件編號
511-SCT019W120G3-4AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
|
|
無庫存前置作業時間 17 週
|
|
最少: 600
倍數: 600
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
90 A
|
26 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
120 nC
|
- 55 C
|
+ 200 C
|
486 W
|
|
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4
- STMicroelectronics
-
600:
HK$96.42
-
無庫存前置作業時間 17 週
-
新產品
|
Mouser 元件編號
511-SCT025W120G3-4
新產品
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
無庫存前置作業時間 17 週
|
|
最少: 600
倍數: 600
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
-10 V, 22 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4
- STMicroelectronics
-
1:
HK$89.84
-
無庫存前置作業時間 17 週
-
新產品
|
Mouser 元件編號
511-SCT070W120G3-4
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
無庫存前置作業時間 17 週
|
|
|
HK$89.84
|
|
|
HK$53.68
|
|
|
HK$45.70
|
|
|
HK$42.58
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
1.2 kV
|
30 A
|
87 mOhms
|
- 10 V, + 22 V
|
3 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
- SCT070W120G3AG
- STMicroelectronics
-
600:
HK$60.33
-
無庫存前置作業時間 17 週
-
新產品
|
Mouser 元件編號
511-SCT070W120G3AG
新產品
|
STMicroelectronics
|
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
|
|
無庫存前置作業時間 17 週
|
|
|
HK$60.33
|
|
|
HK$51.21
|
|
最少: 600
倍數: 600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCTWA40N120G2V
- STMicroelectronics
-
1:
HK$148.29
-
無庫存前置作業時間 32 週
-
NRND
|
Mouser 元件編號
511-SCTWA40N120G2V
NRND
|
STMicroelectronics
|
碳化矽MOSFET Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
|
|
無庫存前置作業時間 32 週
|
|
|
HK$148.29
|
|
|
HK$112.94
|
|
|
HK$94.94
|
|
最少: 1
倍數: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
2.45 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
|
|