電晶體的類型
已用篩選:
IXYS X4-Class 功率MOSFET
02/02/2026
02/02/2026
Offer low on-state resistance and conduction losses, with improved efficiency.
IXYS MMIX1T500N20X4 200V X4-Class功率MOSFET
10/08/2025
10/08/2025
Ceramic-based isolated package improves overall Rth(j-s) and power handling capability.
IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs
09/19/2025
09/19/2025
These devices have a high blocking voltage with low on-state resistance [RDS(ON)].
IXYS IXSJxN120R1K 1200V SiC Power MOSFETs
08/27/2025
08/27/2025
Up to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on).
IXYS IXFP34N65X2W 功率金氧半場效電晶體
03/17/2025
03/17/2025
650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.
IXYS IXSA40N120L2-7 SiC MOSFET
03/06/2025
03/06/2025
Single-switch MOSFET that features 1200V, 80mΩ, 41A industrial-grade device in a TO263-7L package.
IXYS IXSA80N120L2-7 SiC MOSFET
03/06/2025
03/06/2025
Single-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.
IXYS IXFH46N65X2W功率金氧半場效電晶體
02/27/2025
02/27/2025
650V, 69mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.
IXYS IXFH34N65X2W功率金氧半場效電晶體
02/27/2025
02/27/2025
650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.
IXYS IXSH80N120L2KHV SiC MOSFET
02/18/2025
02/18/2025
1200V, 30mΩ, and 79A MOSFET, recommended for use in industrial switch mode power supplies.
IXYS IXSH40N120L2KHV SiC MOSFET
02/18/2025
02/18/2025
1200V, 80mΩ, and 41A MOSFET, recommended for use in industrial switch mode power supplies.
IXYS IXTNx00N20X4 miniBLOC MOSFETs
11/28/2024
11/28/2024
Offers a 200V voltage rating, 340A to 500A current range, and an SOT-227B package.
IXYS Gen5 XPT IGBT
07/25/2024
07/25/2024
Offers a rated voltage of 650V, a current range of 35A to 220A, and a low gate charge.
檢視：1 - 13，共13項
onsemi NVBYST0D8N08X Single N-Channel Power MOSFET
04/14/2026
04/14/2026
Optimized for high‑voltage operation and withstands fast switching and high-current stresses.
ROHM Semiconductor High-Density SiC Power Modules
04/10/2026
04/10/2026
TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
04/07/2026
04/07/2026
Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.
onsemi NTMFD0D9N02P1E MOSFET
04/06/2026
04/06/2026
Dual N-channel MOSFET designed with low Rg for fast switching applications.
Vishay VS-HOT200C080 200A 80V功率金氧半場效電晶體模組
04/02/2026
04/02/2026
This device reduces board space requirements by up to 15% compared to standard discrete solutions.
Toshiba N-Channel/P-Channel Power MOSFETs
03/31/2026
03/31/2026
Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.
STMicroelectronics STL059N4S8AG Power MOSFET
03/31/2026
03/31/2026
A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.
Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETs
03/27/2026
03/27/2026
Application-optimized performance, enabling peak performance for data centers, servers, & AI.
Infineon Technologies OptiMOS™ 6 60V Power MOSFETs
03/27/2026
03/27/2026
Delivers superior performance to OptiMOS 5 via robust power MOSFET technology.
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET
03/24/2026
03/24/2026
Delivers ultra-low conduction and switching losses in a robust TO-220 package.
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)
03/20/2026
03/20/2026
650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.
Infineon Technologies OptiMOS™ 8 Power MOSFETs
03/17/2026
03/17/2026
These are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [RDS(ON)].
ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules
03/17/2026
03/17/2026
Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.
Infineon Technologies Medium-Voltage CoolGaN™ Bidirectional Switches
03/17/2026
03/17/2026
These devices are a great fit for serving as battery disconnect switches in various applications.
onsemi NVMFD5873NL Dual N-Channel Power MOSFETs
03/13/2026
03/13/2026
Designed for compact and efficient designs, including high thermal performance.
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.
Qorvo QPD2560L 300W GaN/SiC HEMT
03/09/2026
03/09/2026
Designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET
03/06/2026
03/06/2026
Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.
EPC EPC2305 Enhancement-Mode GaN Power Transistor
03/05/2026
03/05/2026
Offers a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management.
EPC EPC2302 Enhancement-Mode GaN Power Transistor
03/05/2026
03/05/2026
Engineered for high-frequency DC-DC applications and 48V BLDC motor drives.
Infineon Technologies N-Channel OptiMOS™ 7 80V Power MOSFETs
03/05/2026
03/05/2026
80V, N-channel, normal level devices with superior thermal resistance in a PG‑TDSON‑8 package.
EPC EPC2304 Enhancement-Mode GaN Power Transistor
03/05/2026
03/05/2026
Handles tasks where ultra-high switching frequency and low on-time are advantageous.
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