LPDDR4 Memory

Micron LPDDR4 Memory is optimized to address power consumption issues in battery-operated applications. These memory devices offer 33% faster peak bandwidth compared to DDR4. The LPDDR4 Memory provides 5 times lower power consumption in standby mode compared to standard DRAM. These Memory Devices feature Multi-Chip Package (MCP) and Package-on-Package (PoP) designs that save PCB space. The LPDDR4 Memory Devices optimize x16, x32, and x64 configurations and offer BOM savings for certain applications. The LPDDR4 Memory combines performance, power, latency, and physical space, which makes it energy-efficient. These LPDDR4 Memory Devices are suitable for handsets, battery-operated applications, and ultra-portables.

結果: 2
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 類型 存儲容量 數據匯流排寬度 最高時鐘頻率 封裝/外殼 組織 電源電壓 - 最小值 電源電壓 - 最大值 最低工作溫度 最高工作溫度 封裝
Micron DRAM LPDDR4 16Gbit 32 200/264 WFBGA 1 WT 427庫存量
最少: 1
倍數: 1
最大: 100

SDRAM Mobile - LPDDR4 16 Gbit 32 bit 2.133 GHz WFBGA-200 512 M x 32 1.06 V 1.95 V - 30 C + 85 C Tray
Micron DRAM LPDDR4 32Gbit 32 200/264 WFBGA 2 WT 71庫存量
最少: 1
倍數: 1
最大: 100

SDRAM Mobile - LPDDR4 32 Gbit 32 bit 2.133 GHz WFBGA-200 1 G x 32 1.06 V 1.95 V - 25 C + 85 C Tray