IS46LD CMOS LPDDR2 DRAMs

ISSI IS46LD CMOS LPDDR2 DRAMs are 2Gbit/4Gbit organized as 8 banks of 16Meg/32Meg words of 16bits or 8Meg/16Meg words of 32bits. These DRAMs use a 4bit Double Data Rate (DDR) architecture to achieve high-speed operation. The IS46LD CMOS DRAMs feature Deep Power-Down (DPD) mode, a 10MHz to 533MHz clock frequency range, and Partial Array Self Refresh (PASR). These DRAMs include an on-chip temperature sensor to control the self-refresh rate and High Speed Un-terminated Logic (HSUL_12) I/O interface.

結果: 8
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 類型 存儲容量 數據匯流排寬度 最高時鐘頻率 封裝/外殼 組織 存取時間 電源電壓 - 最小值 電源電壓 - 最大值 最低工作溫度 最高工作溫度 封裝
ISSI DRAM Automotive (Tc: -40 to +105C) 4G, 1.2/1.8V, LPDDR2, 128Mx32, 533MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT 149庫存量
171預期11/5/2026
最少: 1
倍數: 1
最大: 84

SDRAM - LPDDR2 4 Gb 4 bit 533 MHz BGA-168 128 M x 32 10 ns 1.7 V 1.95 V - 40 C + 105 C
ISSI DRAM Automotive (Tc: -40 to +105C) 2G, 1.2/1.8V, LPDDR2, 128Mx16, 533MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT, T&R 1,796庫存量
最少: 1
倍數: 1
最大: 2
: 2,000

SDRAM - LPDDR2 2 Gb 4 bit 533 MHz BGA-134 128 M x 16 10 ns 1.7 V 1.95 V - 40 C + 105 C Reel, Cut Tape
ISSI DRAM Automotive (Tc: -40 to +105C) 4G, 1.2/1.8V, LPDDR2, 128Mx32, 533MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT, T&R 1,646庫存量
最少: 1
倍數: 1
最大: 86
: 2,000

SDRAM - LPDDR2 4 Gb 4 bit 533 MHz BGA-134 128 M x 32 10 ns 1.7 V 1.95 V - 40 C + 105 C Reel, Cut Tape
ISSI DRAM Automotive (Tc: -40 to +105C) 2G, 1.2/1.8V, LPDDR2, 128Mx16, 533MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT 171庫存量
最少: 1
倍數: 1
最大: 200

SDRAM - LPDDR2 2 Gb 4 bit 533 MHz BGA-134 128 M x 16 10 ns 1.7 V 1.95 V - 40 C + 105 C
ISSI DRAM Automotive (Tc: -40 to +105C) 4G, 1.2/1.8V, LPDDR2, 128Mx32, 533MHz, 168 ball PoP (12mmx12mm) RoHS, IT 168庫存量
最少: 1
倍數: 1
最大: 200

SDRAM - LPDDR2 4 Gb 4 bit 533 MHz BGA-134 128 M x 32 10 ns 1.7 V 1.95 V - 40 C + 105 C
ISSI DRAM Automotive (Tc: -40 to +95C), 2G, 1.2/1.8V, LPDDR2, 128Mx16, 533MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT 無庫存前置作業時間 14 週
最少: 171
倍數: 171

SDRAM - LPDDR2 2 Gb 4 bit 533 MHz BGA-134 128 M x 32 10 ns 1.7 V 1.95 V - 40 C + 85 C
ISSI DRAM Automotive (Tc: -40 to +105C) 4G, 1.2/1.8V, LPDDR2, 128Mx32, 533MHz, 168 ball PoP (12mmx12mm) RoHS, IT, T&R 無庫存前置作業時間 14 週
最少: 1,500
倍數: 1,500
: 1,500

SDRAM - LPDDR2 4 Gb 4 bit 533 MHz BGA-168 128 M x 32 10 ns 1.7 V 1.95 V - 40 C + 105 C Reel
ISSI DRAM Automotive (Tc: -40 to +95C), 2G, 1.2/1.8V, LPDDR2, 128Mx16, 533MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT, T&R 無庫存前置作業時間 14 週
最少: 2,000
倍數: 2,000
: 2,000

SDRAM - LPDDR2 2 Gb 4 bit 533 MHz BGA-134 128 M x 32 10 ns 1.7 V 1.95 V - 40 C + 85 C Reel