結果: 41
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
IXYS MOSFET 6 Amps 1200V 2.700 Rds 274庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.2 kV 6 A 2.6 Ohms - 20 V, 20 V 5 V 56 nC - 55 C + 150 C 300 W Enhancement Tube

IXYS MOSFET 6 Amps 1200V 2.700 Rds 193庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 6 A 2.4 Ohms - 20 V, 20 V 2.5 V 56 nC - 55 C + 150 C 300 W Enhancement Tube
IXYS MOSFET TO263 1.2KV 3A N-CH HIVOLT 418庫存量
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms - 20 V, 20 V 2.5 V 42 nC - 55 C + 150 C 200 W Enhancement Tube

IXYS MOSFET High Voltage Power MOSFET 272庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 2.5 A 6 Ohms - 30 V, 30 V 5 V 44.5 nC - 55 C + 150 C 110 W Enhancement Tube

IXYS MOSFET 3 Amps 1200V 4.500 Rds 257庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms - 20 V, 20 V 4.5 V 39 nC - 55 C + 150 C 150 W Enhancement Tube
IXYS MOSFET TO268 1.5KV 12A N-CH HIVOLT 282庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.5 kV 12 A 2.2 Ohms - 30 V, 30 V 2.5 V 106 nC - 55 C + 150 C 890 W Enhancement Tube

IXYS MOSFET High Voltage Power MOSFET 240庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 4 A 6 Ohms - 30 V, 30 V 2.5 V 44.5 nC - 55 C + 150 C 280 W Enhancement Tube

IXYS MOSFET 1500 V High Voltage Power MOSFET 347庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 20 A 1 Ohms - 30 V, 30 V 4.5 V 215 nC - 55 C + 150 C 1.25 kW Enhancement Tube
IXYS MOSFET TO263 150V 4A N-CH HIVOLT 194庫存量
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.5 kV 4 A 6 Ohms - 30 V, 30 V 2.5 V 375 nC - 55 C + 150 C 280 W Enhancement Tube

IXYS MOSFET 1 280庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 16 A 950 mOhms - 30 V, 30 V 3.5 V 120 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFET High Voltage Power MOSFET 3,373庫存量
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 750 mA 17 Ohms - 30 V, 30 V 2.5 V 7.8 nC - 55 C + 150 C 40 W Enhancement Tube
IXYS MOSFET 3 Amps 1200V 4.5 Rds 1,690庫存量
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms - 20 V, 20 V 2.5 V 42 nC - 55 C + 150 C 150 W Enhancement Tube
IXYS MOSFET MOSFET Id3 BVdass1200 961庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms - 20 V, 20 V 2.5 V 42 nC - 55 C + 150 C 200 W Enhancement Tube
IXYS MOSFET 1500V High Voltage Power MOSFET 317庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.2 kV 12 A 2 Ohms - 30 V, 30 V 4.5 V 106 nC - 55 C + 150 C 890 W Enhancement Tube
IXYS MOSFET TO263 1.5KV 3A N-CH HIVOLT 74庫存量
300預期26/10/2026
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.5 kV 3 A 7.3 Ohms - 30 V, 30 V 2.5 V 38.6 nC - 55 C + 150 C 250 W Enhancement Tube

IXYS MOSFET High Voltage Power MOSFET 55庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 3 A 7.3 Ohms - 30 V, 30 V 2.5 V 38.6 nC - 55 C + 150 C 250 W Enhancement Tube
IXYS MOSFET 0.75 Amps 1000V 15 Rds 550庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 750 mA 17 Ohms - 30 V, 30 V 4.5 V 7.8 nC - 55 C + 150 C 40 W Enhancement Tube
IXYS MOSFET 0.5 Amps 1000V 300庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 700 mA 15 Ohms - 30 V, 30 V 4.5 V 7.8 nC - 55 C + 150 C 25 W Enhancement Tube
IXYS MOSFET 0.1 Amps 1000V 80 Rds 320庫存量
最少: 1
倍數: 1
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 1 kV 100 mA 80 Ohms - 20 V, 20 V - 55 C + 150 C 25 W Enhancement Tube

IXYS MOSFET >1200V High Voltage Power MOSFET
300預期8/5/2026
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 12 A 2 Ohms - 30 V, 30 V 4.5 V 106 nC - 55 C + 150 C 890 W Enhancement Tube
IXYS MOSFET 0.75 Amps 1000V 15 Rds 800工廠有庫存
最少: 300
倍數: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 750 mA 17 Ohms - 30 V, 30 V 4.5 V 7.8 nC - 55 C + 150 C 40 W Enhancement Tube

IXYS MOSFET HIGH VOLT PWR MOSFET 1500V 6A 無庫存前置作業時間 32 週
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 6 A 3.5 Ohms - 20 V, 20 V 5 V 67 nC - 55 C + 150 C 540 W Enhancement Tube

IXYS MOSFET High Voltage Power MOSFET 無庫存前置作業時間 65 週
最少: 300
倍數: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 3 A 3.85 Ohms - 30 V, 30 V 2.5 V 67 nC - 55 C + 150 C 125 W Enhancement Tube
IXYS MOSFET 1200V High Voltage Power MOSFET 無庫存前置作業時間 49 週
最少: 300
倍數: 25

Si Through Hole TO-264-3 N-Channel 1.5 kV 20 A 1 Ohms Tube
IXYS MOSFET 2 Amps 800V 6.2 Rds 暫無庫存
最少: 50
倍數: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 2 A 6.2 Ohms - 20 V, 20 V - 55 C + 150 C 54 W Enhancement Tube