HMC1114 Power Amplifiers

Analog Devices Inc. HMC1114 Power Amplifiers are designed as gallium nitride (GaN) broadband amplifiers. The HMC1114 amplifiers deliver 10W with greater than 50% power added efficiency (PAE) and ±0.5dB typical gain flatness across a 2.7GHz to 3.8GHz bandwidth. The amplifiers can achieve a 41.5dBm PSAT from a 28V at 150mA supply voltage. In addition, the amplifiers offer a typical 35dB signal gain, 25.5dB high-power gain for saturated output power, and a typical 44dBM IP3. Analog Devices Inc. HMC1114 power amplifiers are ideal for pulsed and continuous wave applications. These applications include wireless infrastructure, radars, public mobile radios, and general-purpose amplification.

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數量 RoHS ECAD模型 操作頻率
工作電源電壓
運作供電電流
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封裝/外殼
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P1dB - 壓縮點
OIP3 - 三階交調
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Analog Devices RF放大器 GaN Driver Ampllifier
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2.7 GHz to 3.8 GHz 28 V 150 mA 35 dB Power Amplifiers SMD/SMT LFCSP-32 GaN 41.5 dBm 44 dBm - 40 C + 85 C HMC1114 Cut Tape
Analog Devices RF放大器 GaN Driver Ampllifier
規格書

2.7 GHz to 3.8 GHz 28 V 150 mA 32 dB Driver Amplifiers SMD/SMT LFCSP-32 GaN - 40 C + 85 C HMC1114 Reel