650V CoolMOS™ CFD7 SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7 SJ Power MOSFETs are ultra-fast diodes that extend the voltage class offering of the CFD7 family. The power MOSFETs have an additional 50V breakdown voltage, integrated fast body diode, improved switching performance, and excellent thermal behavior. These CFD7 power MOSFETs offer the highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). The MOSFETs blend all the advantages of a fast-switching technology with superior hard computation robustness. These power MOSFETs support CoolMOS™ CFD7 technology that meets reliability standards and supports high power density solutions.

結果: 17
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
Infineon Technologies MOSFET 650V CoolMOS CFD7 SJ Power Device 525庫存量
最少: 1
倍數: 1
: 750

Si CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET 650V CoolMOS CFD7 SJ Power Device 525庫存量
最少: 1
倍數: 1
: 750

Si CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 384庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 22 A 110 mOhms - 20 V, 20 V 4.5 V 41 nC - 55 C + 150 C 114 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 272庫存量
最少: 1
倍數: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 36 A 60 mOhms - 10 V, 10 V 3.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 439庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-2 (TO-263-2) N-Channel 1 Channel 700 V 50 A 41 mOhms - 20 V, 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,037庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-2 (TO-263-2) N-Channel 1 Channel 650 V 25 A 90 mOhms - 20 V, 20 V 4.5 V 53 nC - 55 C + 150 C 127 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 240庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 69 A 29 mOhms - 20 V, 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 140庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 700 V 106 A 18 mOhms - 20 V, 20 V 4.5 V 234 nC - 55 C + 150 C 446 W Enhancement Tube

Infineon Technologies MOSFET HIGH POWER_NEW 314庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 68.5 A 41 mOhms - 20 V, 20 V 4 V 102 nC - 55 C + 150 C 500 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 734庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 190 mOhms - 20 V, 20 V 4.5 V 23 nC - 40 C + 150 C 63 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 633庫存量
1,000預期16/2/2026
最少: 1
倍數: 1
: 1,000

Si SMD/SMT N-Channel 1 Channel 700 V 15 A 155 mOhms - 20 V, 20 V 4.5 V 28 nC - 55 C + 150 C 77 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 318庫存量
最少: 1
倍數: 1

Si Through Hole N-Channel 1 Channel 650 V 50 A 41 mOhms - 20 V, 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 151庫存量
最少: 1
倍數: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 36 A 60 mOhms - 10 V, 10 V 4.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube

Infineon Technologies MOSFET HIGH POWER_NEW 136庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 69 A 29 mOhms - 20 V, 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube

Infineon Technologies MOSFET HIGH POWER_NEW 94庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 19 A 125 mOhms - 20 V, 20 V 4.5 V 36 nC - 55 C + 150 C 98 W Enhancement Tube
Infineon Technologies MOSFET AUTOMOTIVE_COOLMOS
240在途量
最少: 1
倍數: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 63 A 35 mOhms - 20 V, 20 V 4.5 V 145 nC - 40 C + 150 C 305 W Enhancement Tube

Infineon Technologies MOSFET HIGH POWER_NEW 無庫存前置作業時間 17 週
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 25 A 90 mOhms - 20 V, 20 V 4.5 V 53 nC - 55 C + 150 C 127 W Enhancement Tube