Automotive-Grade N-Channel MDmesh DM2 MOSFETs

STMicroelectronics Automotive-Grade N-Channel MDmesh DM2 Power MOSFETs are high-voltage with very low recovery charge (Qrr) and time (trr) combined with low RDS(on). They are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

結果: 13
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱 封裝

STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET i 397庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 60 mOhms - 25 V, 25 V 4 V 90 nC - 55 C + 150 C 360 W Enhancement AEC-Q101 MDmesh Tube

STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET i 482庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 93 mOhms - 25 V, 25 V 4 V 56 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Tube

STMicroelectronics MOSFET Automotive-grade N-channel 650 V, 0.070 Ohm typ., 38 A MDmesh DM2 Power MOSFET i 662庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 38 A 87 mOhms - 25 V, 25 V 4 V 70 nC - 55 C + 150 C 300 W Enhancement AEC-Q101 MDmesh Tube
STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET i 939庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 34 A 93 mOhms - 20 V, 20 V 3 V 56 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in 508庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 60 A 50 mOhms - 25 V, 25 V 4 V 27 nC - 55 C + 150 C 446 W Enhancement AEC-Q101 MDmesh Tube

STMicroelectronics MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET i 454庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 48 A 65 mOhms - 25 V, 25 V 4 V 88 nC - 55 C + 150 C 360 W Enhancement AEC-Q101 MDmesh Tube
STMicroelectronics MOSFET Automotive-grade N-channel 400 V, 0.063 Ohm typ., 38 A MDmesh DM2 Power MOSFET i 4,775庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 400 V 38 A 72 mOhms - 25 V, 25 V 3 V 56 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Tube
STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET i 1,223庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 28 A 110 mOhms - 30 V, 30 V 4 V 54 nC - 55 C + 150 C 210 W Enhancement AEC-Q101 MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Automotive-grade N-channel 400 V, 0.063 Ohm typ., 38 A MDmesh DM2 Power MOSFET i 1,292庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 400 V 38 A 72 mOhms - 30 V, 30 V 4 V 56 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Automotive-grade N-channel 500 V, 0.07 Ohm typ., 35 A MDmesh DM2 Power MOSFET in 1,429庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 35 A 84 mOhms - 25 V, 25 V 4 V 57 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in 372庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 66 A 42 mOhms - 25 V, 25 V 4 V 121 nC - 55 C + 150 C 446 W Enhancement AEC-Q101 MDmesh Tube
STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET i 無庫存前置作業時間 16 週
最少: 1,000
倍數: 1,000

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 93 mOhms - 25 V, 25 V 4 V 56 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Tube
STMicroelectronics MOSFET N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package 無庫存前置作業時間 16 週
最少: 600
倍數: 600

Si Through Hole N-Channel 1 Channel 650 V 33 A 91 mOhms - 25 V, 25 V 4.75 V 52.5 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube