STPSC 650V Schottky Silicon-Carbide Diodes

STMicroelectronics STPSC 650V Schottky Silicon-Carbide Diodes are ultra-high-performance power Schottky diodes. The wide bandgap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These STMicroelectronics devices are especially suited for PFC applications, boosting performance in hard switching conditions. High forward surge capability ensures good robustness during transient phases.

結果: 3
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 配置 If - 順向電流 Vrrm - 重複反向電壓 Vf - 順向電壓 Ifsm - 順向浪湧電流 Ir - 反向電流 最低工作溫度 最高工作溫度 系列 封裝
STMicroelectronics 碳化矽肖特基二極管 Dual 650V Pwr Schtky Silicn Carbide Diode 752庫存量
最少: 1
倍數: 1

Through Hole TO-220-3 Dual 10 A 650 V 1.56 V 470 A 425 uA - 40 C + 175 C STPSC Tube
STMicroelectronics 碳化矽肖特基二極管 Dual 650V Pwr Schtky Silicn Carbide Diod 632庫存量
最少: 1
倍數: 1

Through Hole TO-220-3 Dual 6 A 650 V 1.56 V 400 A 250 uA - 40 C + 175 C STPSC Tube
STMicroelectronics 碳化矽肖特基二極管 Dual 650V Pwr Schtky Silicn Carbide Diode
2,000預期27/4/2026
最少: 1
倍數: 1

Through Hole TO-220-3 Dual 8 A 650 V 1.56 V 420 A 335 uA - 40 C + 175 C STPSC Tube