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IXTA8N70X2

Name: IXYS IXTA8N70X2
Brand: IXYS
SKU: 747-IXTA8N70X2
Price: 37.89 HKD
Availability: OutOfStock

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Mouser 編號：

747-IXTA8N70X2

製造商編號：

IXTA8N70X2

製造商：

IXYS

說明：

MOSFET 700V/8A Ultra Junct X2-Class MOSFET

規格書:

IXTA8N70X2 規格書

ECAD模型:

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工廠前置作業時間：: 41 週工廠預計生產時間。

此產品已報告長備貨期。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$37.89	HK$37.89
	HK$25.07	HK$250.70
	HK$19.32	HK$1,932.00
	HK$15.04	HK$7,520.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	IXYS
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	TO-263-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	700 V
Id - C連續漏極電流:	8 A
Rds On - 漏-源電阻:	500 mOhms
Vgs - 閘極-源極電壓:	- 30 V, 30 V
Vgs th - 門源門限電壓 :	3 V
Qg - 閘極充電:	12 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	150 W
通道模式:	Enhancement
公司名稱:	HiPerFET
封裝:	Tube
品牌:	IXYS
配置:	Single
下降時間:	24 ns
互導 - 最小值:	4.8 S
產品類型:	MOSFETs
上升時間:	28 ns
系列:	X2-Class
原廠包裝數量:	50
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	53 ns
標準開啟延遲時間:	24 ns
每件重量:	4 g

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規格書

IXTA8N70X2 規格書

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

X2-Class Power MOSFETs with HiPerFET™

IXYS X2-Class Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages, including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics and servo controls.

Ultra Junction MOSFETs

IXYS Ultra Junction MOSFETs feature low R_DS(on) and low Q_g in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. IXYS Ultra Junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

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X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

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HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.