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IXFN32N100Q3

Name: IXYS IXFN32N100Q3
Brand: IXYS
SKU: 747-IXFN32N100Q3
Price: 376.31 HKD
Availability: OutOfStock

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Mouser 編號：

747-IXFN32N100Q3

製造商編號：

IXFN32N100Q3

製造商：

IXYS

說明：

MOSFET模組 Q3Class HiPerFET Pwr MOSFET 1000V/28A

規格書:

IXFN32N100Q3 規格書

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工廠前置作業時間：: 27 週工廠預計生產時間。

此產品已報告長備貨期。

輸入數量：

最少： 300 多個： 10

單價:

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總價:

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Pricing (HKD)

數量	單價	總價
	HK$376.31	HK$112,893.00

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商品屬性	屬性值	選擇屬性
製造商:	IXYS
產品類型:	MOSFET模組
RoHS:
技術:	Si
安裝風格:	Screw Mount
封裝/外殼:	SOT-227-4
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	1 kV
Id - C連續漏極電流:	28 A
Rds On - 漏-源電阻:	320 mOhms
Vgs - 閘極-源極電壓:	- 30 V, + 30 V
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	780 W
系列:	IXFN32N1003
封裝:	Tube
品牌:	IXYS
配置:	Single
產品類型:	MOSFET Modules
上升時間:	300 ns
原廠包裝數量:	10
子類別:	Discrete and Power Modules
公司名稱:	HiPerFET
類型:	HiperFET
每件重量:	30 g

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規格書

IXFN32N100Q3 規格書

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CNHTS:: 8541900000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Q3-Class HiperFET™ Power MOSFETs

IXYS Q3-Class HiperFET™ Power MOSFETs provide the end-user with a broad range of devices with exceptional power-switching performance. They also offer excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. These MOSFETs come with drain-to-source voltage ratings of 200V to 1000V and drain current ratings of 10A to 100A. These features make the Q3-Class an optimized combination of low on-state resistance (R_dson) and gate charge (Q_g), substantially reducing the device's conduction and switching loss. Power switching capabilities and device ruggedness are further enhanced by utilizing the HiperFET process. This process yields a device with a fast intrinsic rectifier, which provides for a low reverse recovery charge (Q_rr) while enhancing the device's commutating dv/dt ratings (up to 50V/ns).

HiPerFET Power MOSFETs

IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances. These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types. View all .