AS4C64M4SA-7TCNTR

Alliance Memory
913-AS4C64M4SA7TCNT
AS4C64M4SA-7TCNTR

製造商:

說明:
DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

供貨情況

庫存:
暫無庫存
工廠前置作業時間:
20 週 工廠預計生產時間。
最少: 1000   多個: 1000
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
完整捲(訂購多個1000)
HK$32.63 HK$32,630.00
HK$31.89 HK$63,780.00

備用包裝

製造商 元件編號:
包裝:
Tray
供貨情況:
庫存量
價格:
HK$35.35
最小值:
1

商品屬性 屬性值 選擇屬性
Alliance Memory
產品類型: DRAM
RoHS:  
SDRAM
256 Mbit
4 bit
143 MHz
TSOP-II-54
64 M x 4
5.4 ns
3 V
3.6 V
0 C
+ 70 C
AS4C64M4SA
Reel
品牌: Alliance Memory
組裝國家: Not Available
擴散國: Not Available
原產國: TW
濕度敏感: Yes
安裝風格: SMD/SMT
產品類型: DRAM
原廠包裝數量: 1000
子類別: Memory & Data Storage
電源電流 - 最大值: 55 mA
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所選屬性: 0

CAHTS:
8542320020
USHTS:
8542320024
MXHTS:
8542320201
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.