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STMicroelectronics H6/F6 Automotive P-Channel MOSFETs

STMicroelectronics H6/F6 Automotive P-Channel MOSFETs are developed using the STMicroelectronics STripFET™ H6/F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.

Features

  • Designed for automotive applications and AEC-Q101 qualified
  • Low on-resistance
  • Low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

Specifications

  • -40VDS
  • 15mΩ maximum RDS(on)
  • -50A ID
Published: 2015-08-24 | Updated: 2022-03-11