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SiC MOSFETs

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Results: 59

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Part #

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package

SCTHC250N120G3AG
STMicroelectronics
1: HK$631.21
33In Stock
61On Order
New Product

Mfr. Part No.
SCTHC250N120G3AG

Mouser Part No
511-SCTHC250N120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package

Datasheet

33In Stock

61On Order

HK$631.21

HK$500.35

HK$426.95

Min.: 1
Mult.: 1

Through Hole

STPAK-4

1 Channel

1.2 kV

239 A

8.5 mOhms

- 10 V, + 22 V

4.4 V

304 nC

- 55 C

+ 200 C

994 W

AEC-Q100

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

SCTL35N65G2V
STMicroelectronics
1: HK$149.60
2,309In Stock

Mfr. Part No.
SCTL35N65G2V

Mouser Part No
511-SCTL35N65G2V

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

Learn More

Datasheet

2,309In Stock

Cut Tape

HK$149.60

HK$106.20

HK$92.39

HK$86.23

Reel

HK$86.23

MouseReel Available

Min.: 1
Mult.: 1

: 3,000

SMD/SMT

PowerFLAT-5

1 Channel

650 V

40 A

67 mOhms

- 10 V, + 22 V

5 V

73 nC

- 55 C

+ 175 C

417 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A

SCT019HU120G3AG
STMicroelectronics
1: HK$181.83
7In Stock
600Expected 19/2/2027
New Product

Mfr. Part No.
SCT019HU120G3AG

Mouser Part No
511-SCT019HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A

Learn More

Datasheet

7In Stock

600Expected 19/2/2027

Cut Tape

HK$181.83

HK$132.59

HK$110.81

Reel

HK$105.30

Min.: 1
Mult.: 1

: 600

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

SCT012W90G3-4AG
STMicroelectronics
1: HK$182.48
630In Stock

Mfr. Part No.
SCT012W90G3-4AG

Mouser Part No
511-SCT012W90G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

Learn More

Datasheet

630In Stock

HK$182.48

HK$112.78

Min.: 1
Mult.: 1

Through Hole

HiP247-3

1 Channel

900 V

110 A

15.8 mOhms

- 10 V, + 22 V

3.1 V

138 nC

- 55 C

+ 200 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

SCT015W120G3-4AG
STMicroelectronics
1: HK$219.64
540In Stock

Mfr. Part No.
SCT015W120G3-4AG

Mouser Part No
511-SCT015W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

Learn More

Datasheet

540In Stock

HK$219.64

HK$175.83

HK$152.07

HK$143.93

Quote

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

1.2 kV

129 A

15 mOhms

- 18 V, + 18 V

4.2 V

167 nC

- 55 C

+ 200 C

673 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

SCT018W65G3-4AG
STMicroelectronics
1: HK$153.63
448In Stock

Mfr. Part No.
SCT018W65G3-4AG

Mouser Part No
511-SCT018W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

Datasheet

448In Stock

HK$153.63

HK$99.79

HK$92.89

HK$82.28

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

650 V

55 A

27 mOhms

- 18 V, + 18 V

4.2 V

77 nC

- 55 C

+ 200 C

398 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

SCT020W120G3-4AG
STMicroelectronics
1: HK$166.29
301In Stock
600On Order

Mfr. Part No.
SCT020W120G3-4AG

Mouser Part No
511-SCT020W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

Learn More

Datasheet

301In Stock

600On Order

HK$166.29

HK$103.98

HK$98.89

Min.: 1
Mult.: 1

Through Hole

Hip247-4

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

+ 200 C

541 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

SCT025W120G3AG
STMicroelectronics
1: HK$155.77
250In Stock
600Expected 19/3/2027

Mfr. Part No.
SCT025W120G3AG

Mouser Part No
511-SCT025W120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

Learn More

Datasheet

250In Stock

600Expected 19/3/2027

HK$155.77

HK$96.91

HK$90.91

Min.: 1
Mult.: 1

Through Hole

HiP247-3

1 Channel

1.2 kV

56 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

SCT027H65G3AG
STMicroelectronics
1: HK$111.87
599In Stock

Mfr. Part No.
SCT027H65G3AG

Mouser Part No
511-SCT027H65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

Learn More

Datasheet

599In Stock

Cut Tape

HK$111.87

HK$78.09

HK$71.19

HK$64.69

Reel

HK$59.18

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

1 Channel

650 V

60 A

39.3 mOhms

- 10 V, + 22 V

3 V

48.6 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

SCT027W65G3-4AG
STMicroelectronics
1: HK$136.12
246In Stock

Mfr. Part No.
SCT027W65G3-4AG

Mouser Part No
511-SCT027W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

Learn More

Datasheet

246In Stock

HK$136.12

HK$103.90

HK$72.17

HK$61.40

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

650 V

60 A

29 mOhms

- 18 V, + 18 V

4.2 V

51 nC

- 55 C

+ 200 C

313 W

Enhancement

AEC-Q100

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4
STMicroelectronics
1: HK$95.60
487In Stock

Mfr. Part No.
SCT040W65G3-4

Mouser Part No
511-SCT040W65G3-4

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

487In Stock

HK$95.60

HK$52.36

HK$48.83

Min.: 1
Mult.: 1

Through Hole

HiP247-4

1 Channel

650 V

30 A

63 mOhms

- 10 V, + 22 V

3 V

37.5 nC

- 55 C

+ 200 C

240 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4AG
STMicroelectronics
1: HK$110.31
481In Stock

Mfr. Part No.
SCT040W65G3-4AG

Mouser Part No
511-SCT040W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

481In Stock

HK$110.31

HK$79.90

HK$68.39

HK$58.94

Min.: 1
Mult.: 1

Through Hole

HiP247-4

1 Channel

650 V

30 A

63 mOhms

- 10 V, + 22 V

3 V

37.5 nC

- 55 C

+ 200 C

240 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

SCT055TO65G3
STMicroelectronics
1: HK$75.21
1,404In Stock

Mfr. Part No.
SCT055TO65G3

Mouser Part No
511-SCT055TO65G3

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

Learn More

Datasheet

1,404In Stock

Cut Tape

HK$75.21

HK$51.38

HK$42.42

HK$38.55

HK$35.26

Reel

HK$35.26

Min.: 1
Mult.: 1

: 1,800

SMD/SMT

TOLL-8

1 Channel

650 V

30 A

72 mOhms

- 10 V, + 22 V

3 V

31 nC

- 55 C

+ 175 C

234 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

SCT018H65G3AG
STMicroelectronics
1: HK$136.21
22In Stock
1,000Expected 29/1/2027

Mfr. Part No.
SCT018H65G3AG

Mouser Part No
511-SCT018H65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

22In Stock

1,000Expected 29/1/2027

Cut Tape

HK$136.21

HK$96.09

HK$81.87

Reel

HK$76.45

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

1 Channel

650 V

55 A

27 mOhms

- 18 V, + 18 V

4.2 V

79.4 nC

- 55 C

+ 175 C

385 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

SCT025W120G3-4AG
STMicroelectronics
1: HK$173.44
13In Stock
1,200On Order

Mfr. Part No.
SCT025W120G3-4AG

Mouser Part No
511-SCT025W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Learn More

Datasheet

13In Stock

1,200On Order

HK$173.44

HK$119.68

HK$109.24

HK$100.45

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

1.2 kV

56 A

37 mOhms

- 18 V, + 18 V

4.2 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A

SCT040W120G3-4AG
STMicroelectronics
1: HK$115.66
116In Stock
600Expected 2/10/2026

Mfr. Part No.
SCT040W120G3-4AG

Mouser Part No
511-SCT040W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A

Learn More

Datasheet

116In Stock

600Expected 2/10/2026

HK$115.66

HK$85.49

HK$70.03

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

SCT040W120G3AG
STMicroelectronics
1: HK$114.18
94In Stock
600Expected 21/5/2027

Mfr. Part No.
SCT040W120G3AG

Mouser Part No
511-SCT040W120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Learn More

Datasheet

94In Stock

600Expected 21/5/2027

HK$114.18

HK$80.23

HK$61.24

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

SCT070W120G3-4AG
STMicroelectronics
1: HK$124.04
32In Stock
1,200Expected 29/1/2027

Mfr. Part No.
SCT070W120G3-4AG

Mouser Part No
511-SCT070W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

32In Stock

1,200Expected 29/1/2027

HK$124.04

HK$93.05

HK$72.34

HK$63.87

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

41 nC

- 55 C

+ 200 C

236 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A

SCT040H65G3AG
STMicroelectronics
1: HK$99.54
730In Stock

Mfr. Part No.
SCT040H65G3AG

Mouser Part No
511-SCT040H65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A

Learn More

Datasheet

730In Stock

Cut Tape

HK$99.54

HK$55.98

HK$54.50

Reel

HK$51.54

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

1 Channel

650 V

30 A

40 mOhms

- 10 V, + 22 V

4.2 V

39.5 nC

- 55 C

+ 175 C

221 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an

SCT20N120AG
STMicroelectronics
1: HK$140.64
334In Stock

Mfr. Part No.
SCT20N120AG

Mouser Part No
511-SCT20N120AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an

Learn More

Datasheet

334In Stock

HK$140.64

HK$99.71

HK$74.23

HK$66.58

Quote

Min.: 1
Mult.: 1

Through Hole

1 Channel

1.2 kV

20 A

239 mOhms

- 20 V, + 20 V

3.5 V

45 nC

- 55 C

+ 200 C

175 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

SCTL90N65G2V
STMicroelectronics
1: HK$256.46
1,301In Stock

Mfr. Part No.
SCTL90N65G2V

Mouser Part No
511-SCTL90N65G2V

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

Learn More

Datasheet

1,301In Stock

Cut Tape

HK$256.46

HK$183.39

HK$183.31

HK$173.69

Reel

HK$173.69

MouseReel Available

Min.: 1
Mult.: 1

: 3,000

SMD/SMT

PowerFLAT-5

1 Channel

650 V

40 A

18 mOhms

- 10 V, + 22 V

5 V

157 nC

- 55 C

+ 175 C

935 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

SCT020HU120G3AG
STMicroelectronics
1: HK$187.09
10In Stock
1,200On Order
New Product

Mfr. Part No.
SCT020HU120G3AG

Mouser Part No
511-SCT020HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

Learn More

Datasheet

10In Stock

1,200On Order

Cut Tape

HK$187.09

HK$139.74

HK$117.96

Reel

HK$106.86

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

555 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

SCT040TO65G3
STMicroelectronics
1: HK$84.67
14In Stock
1,800Expected 29/1/2027

Mfr. Part No.
SCT040TO65G3

Mouser Part No
511-SCT040TO65G3

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

Learn More

Datasheet

14In Stock

1,800Expected 29/1/2027

Cut Tape

HK$84.67

HK$58.20

HK$46.61

HK$44.39

HK$41.10

Reel

HK$41.10

Min.: 1
Mult.: 1

: 1,800

SMD/SMT

TOLL-8

1 Channel

650 V

35 A

63 mOhms

- 10 V, + 22 V

3 V

42.5 nC

- 55 C

+ 175 C

288 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055W65G3-4AG
STMicroelectronics
1: HK$123.55
5In Stock
600Expected 16/4/2027

Mfr. Part No.
SCT055W65G3-4AG

Mouser Part No
511-SCT055W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Learn More

Datasheet

5In Stock

600Expected 16/4/2027

HK$123.55

HK$94.12

HK$84.26

HK$68.31

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

650 V

30 A

72 mOhms

- 18 V, + 18 V

4.2 V

32 nC

- 55 C

+ 200 C

210 W

Enhancement

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package

SCT070H120G3AG
STMicroelectronics
1: HK$107.52
14In Stock

Mfr. Part No.
SCT070H120G3AG

Mouser Part No
511-SCT070H120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package

Learn More

Datasheet

14In Stock

Cut Tape

HK$107.52

HK$74.88

HK$60.25

Reel

HK$56.22

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

37 nC

- 55 C

+ 175 C

223 W

Enhancement

AEC-Q101

SiC MOSFETs

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8.5 mOhms
10.5 mOhms
12 mOhms
15 mOhms
15.8 mOhms
18 mOhms
22 mOhms
26 mOhms
27 mOhms
28 mOhms
29 mOhms
37 mOhms
39.3 mOhms
40 mOhms
54 mOhms
63 mOhms
67 mOhms
72 mOhms
87 mOhms
100 mOhms

14 nC
22 nC
29 nC
31 nC
32 nC
36 nC
37 nC
37.5 nC
39.5 nC
41 nC
42.5 nC
45 nC
48.6 nC
51 nC
54 nC
56 nC
61 nC
73 nC
76 nC
77 nC

120 W
150 W
175 W
185 W
210 W
221 W
223 W
234 W
236 W
240 W
266 W
278 W
288 W
300 W
312 W
313 W
375 W
385 W
388 W
398 W