32 bit DRAM

結果: 356
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 類型 存儲容量 數據匯流排寬度 最高時鐘頻率 封裝/外殼 組織 存取時間 電源電壓 - 最小值 電源電壓 - 最大值 最低工作溫度 最高工作溫度 系列 封裝
ISSI DRAM Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS
190在途量
最少: 1
倍數: 1

SDRAM 128 Mbit 32 bit 166 MHz BGA-90 4 M x 32 6 ns 3 V 3.6 V - 40 C + 105 C IS45S32400F Tray
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 143Mhz, 86 pin TSOP II, RoHS, IT 前置作業時間 52 週
最少: 1
倍數: 1

SDRAM 512 Mbit 32 bit 167 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II RoHS
1,293在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 32 bit 166 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800J
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS
1,200在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 32 bit 143 MHz BGA-90 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800J
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS, IT, T&R
1,496在途量
最少: 1
倍數: 1
: 1,500

SDRAM 256 Mbit 32 bit 143 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J Reel, Cut Tape, MouseReel
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS, T&R
385在途量
最少: 1
倍數: 1
: 1,500
SDRAM 256 Mbit 32 bit 143 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800J Reel, Cut Tape, MouseReel
ISSI DRAM Automotive (-40 to +85C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 86 pin TSOP II (400 mil) RoHS, T&R
1,500預期16/10/2026
最少: 1
倍數: 1
: 1,500

SDRAM 128 Mbit 32 bit 166 MHz TSOP-II-86 4 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C Reel, Cut Tape
ISSI DRAM 64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT 前置作業時間 52 週
最少: 1
倍數: 1

SDRAM 64 Mbit 32 bit 166 MHz BGA-90 2 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 128M, 3.3V, SDRAM, 4Mx32, 143Mhz, 86 pin TSOP II (400 mil) RoHS
1,943在途量
最少: 1
倍數: 1

SDRAM 128 Mbit 32 bit 143 MHz TSOP-II-86 4 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
1,946在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 32 bit 166 MHz BGA-90 8 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 256M, 3.3V, Mobile SDRAM, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
239預期12/7/2027
最少: 1
倍數: 1

SDRAM Mobile 256 Mbit 32 bit 166 MHz BGA-90 8 M x 32 5.5 ns 2.7 V 3.6 V - 40 C + 85 C IS42SM32800K Tray
ISSI DRAM Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 86 pin TSOP II (400 mil) RoHS
972預期19/7/2027
最少: 1
倍數: 1

SDRAM 128 Mbit 32 bit 166 MHz TSOP-II-86 4 M x 32 5.4 ns 3 V 3.6 V - 40 C + 105 C
ISSI DRAM 128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R
2,500在途量
最少: 1
倍數: 1
: 2,500

SDRAM 128 Mbit 32 bit 166 MHz BGA-90 4 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C Reel, Cut Tape
Alliance Memory DRAM LPDDR2, 4G, 128M X 32, 1.2V, 134 BALL BGA, 400MHZ, Industrial TEMP - Tray
124預期21/10/2026
最少: 1
倍數: 1

SDRAM Mobile - LPDDR2 4 Gbit 32 bit 400 MHz FBGA-134 128 M x 32 5.5 ns 1.14 V 1.95 V - 40 C + 85 C AS4C128M32MD2A-25 Tray
Alliance Memory DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
348預期26/8/2026
最少: 1
倍數: 1

SDRAM Mobile 512 Mbit 32 bit 166 MHz FBGA-90 16 M x 32 5.5 ns 1.7 V 1.95 V - 40 C + 85 C AS4C16M32MSA Tray
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 143Mhz, 86 pin TSOP II, RoHS
108預期28/10/2026
最少: 1
倍數: 1

SDRAM 512 Mbit 32 bit 167 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS
780在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 32 bit 143 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800J Tray
ISSI DRAM 64M, 3.3V, SDRAM, 2Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
240預期10/8/2026
最少: 1
倍數: 1

SDRAM 64 Mbit 32 bit 143 MHz BGA-90 2 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 128M, 3.3V, SDRAM, 4Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
240預期12/8/2026
最少: 1
倍數: 1

SDRAM 128 Mbit 32 bit 143 MHz BGA-90 4 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM Automotive (-40 to +85C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 86 pin TSOP II (400 mil) RoHS
108預期28/7/2026
最少: 1
倍數: 1

SDRAM 128 Mbit 32 bit 166 MHz TSOP-II-86 4 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C
Intelligent Memory DRAM LPDDR4x 24Gb 768Mx32 2133MHz FBGA200 -20C to 85C 無庫存前置作業時間 10 週
最少: 120
倍數: 120

SDRAM - LPDDR4X 24 Gbit 32 bit 2.133 GHz FBGA-200 768 M x 32 600 mV 1.8 V - 20 C + 85 C LPDDR4x Tray
Intelligent Memory DRAM SDRAM, 64Mb, 3.3V, 2Mx32, 166MHz (166Mbps), -40C to +85C, FBGA-54 無庫存前置作業時間 8 週
最少: 1
倍數: 1

SDRAM 64 Mbit 32 bit 166 MHz FBGA-90 2 M x 32 5.4 ns 3 V 3.6 V - 40 C + 85 C IM6432SD Tray
Intelligent Memory DRAM LPDDR4x 8Gb 256Mx32 2133MHz FBGA200 -20C to 85C 無庫存前置作業時間 8 週
最少: 1
倍數: 1

SDRAM - LPDDR4X 8 Gbit 32 bit 2.133 GHz FBGA-200 256 M x 32 600 mV 1.8 V - 20 C + 85 C LPDDR4x Tray
Intelligent Memory DRAM LPDDR4x 24Gb 768Mx32 2133MHz FBGA200 -40C to 85C 無庫存前置作業時間 10 週
最少: 120
倍數: 120

SDRAM - LPDDR4X 24 Gbit 32 bit 2.133 GHz FBGA-200 768 M x 32 600 mV 1.8 V - 40 C + 95 C LPDDR4x Tray
Intelligent Memory DRAM ECC LPDDR4, 4Gb, 1.1V, 128Mx32, 1600MHz (3200Mbps), -40C to +95C, FBGA-200 無庫存前置作業時間 26 週
最少: 1
倍數: 1

SDRAM - LPDDR4 4 Gbit 32 bit 1.6 GHz FBGA-200 128 M x 32 1.06 V 1.17 V - 40 C + 95 C IME4G32L4 Tray