|
|
DRAM Automotive (Tc: -40 to +105C), 8G, 1.2V, DDR4, 512Mx16, 2666MT/s @ 19-19-19, 96 ball BGA (10mm x14mm) RoHS, IT
ISSI IS46QR16512A-075VBLA2
- IS46QR16512A-075VBLA2
- ISSI
-
1:
HK$798.49
-
30預期23/12/2026
|
Mouser 元件編號
870-QR16512A075VBLA2
|
ISSI
|
DRAM Automotive (Tc: -40 to +105C), 8G, 1.2V, DDR4, 512Mx16, 2666MT/s @ 19-19-19, 96 ball BGA (10mm x14mm) RoHS, IT
|
|
30預期23/12/2026
|
|
最少: 1
倍數: 1
|
|
|
|
|
|
|
BGA-96
|
|
|
|
|
|
|
|
|
|
|
|
DRAM DDR4,(Micron), 8Gb, 1G x 8, 1.2V, 78-ball FBGA, 1600Mhz, Commercial Temp
Alliance Memory MT40A1G8AG-062E:R
- MT40A1G8AG-062E:R
- Alliance Memory
-
1:
HK$1,212.78
-
74預期15/3/2027
-
新產品
|
Mouser 元件編號
913-MT40A1G8AG-062ER
新產品
|
Alliance Memory
|
DRAM DDR4,(Micron), 8Gb, 1G x 8, 1.2V, 78-ball FBGA, 1600Mhz, Commercial Temp
|
|
74預期15/3/2027
|
|
最少: 1
倍數: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
DRAM DDR2 1Gb, 64Mx16, 800 at CL5, 1.8V, FBGA-84
- A3R1GE40JBF-8E
- Zentel Japan
-
1:
HK$113.68
-
102預期9/11/2026
|
Mouser 元件編號
155-A3R1GE40JBF-8E
|
Zentel Japan
|
DRAM DDR2 1Gb, 64Mx16, 800 at CL5, 1.8V, FBGA-84
|
|
102預期9/11/2026
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR2
|
1 Gbit
|
16 bit
|
400 MHz
|
FPGA-84
|
64 M x 16
|
400 ps
|
1.7 V
|
1.9 V
|
0 C
|
+ 85 C
|
DDR2
|
Tray
|
|
|
|
DRAM 1G, 1.8V, DDR2, 128Mx8, 400Mhz @CL5, 60 ball BGA, (8mmx 10.5mm), RoHS, IT
- IS43DR81280C-25DBLI
- ISSI
-
1:
HK$101.43
-
29預期26/10/2027
|
Mouser 元件編號
870-3DR81280C-25DBLI
|
ISSI
|
DRAM 1G, 1.8V, DDR2, 128Mx8, 400Mhz @CL5, 60 ball BGA, (8mmx 10.5mm), RoHS, IT
|
|
29預期26/10/2027
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR2
|
|
|
|
BGA-60
|
|
|
|
|
|
|
IS43DR81280C
|
Reel
|
|
|
|
DRAM 16Mb 1Mx16 50ns Async FP DRAM
- IS41LV16105D-50TLI
- ISSI
-
1:
HK$73.24
-
117在途量
|
Mouser 元件編號
870-41LV16105D50TLI
|
ISSI
|
DRAM 16Mb 1Mx16 50ns Async FP DRAM
|
|
117在途量
|
|
最少: 1
倍數: 1
|
|
|
FPM DRAM
|
16 Mbit
|
16 bit
|
|
TSOP-II-44
|
1 M x 16
|
50 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
IS41LV16105D
|
Bulk
|
|
|
|
DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 86 pin TSOP II, RoHS, IT
- IS42S32160F-75ETLI
- ISSI
-
1:
HK$189.39
-
108在途量
|
Mouser 元件編號
870-42S32160F75ETLI
|
ISSI
|
DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 86 pin TSOP II, RoHS, IT
|
|
108在途量
|
|
最少: 1
倍數: 1
:
108
|
|
|
SDRAM
|
512 Mbit
|
32 bit
|
133 MHz
|
TSOP-II-86
|
16 M x 32
|
6 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
IS42S32160F
|
Reel, Cut Tape
|
|
|
|
DRAM M-SDRAM,128M,3.3V 166MHz,4Mx32, IT
- IS42SM32400H-6BLI
- ISSI
-
1:
HK$66.09
-
240預期7/9/2027
|
Mouser 元件編號
870-42SM32400H-6BLI
|
ISSI
|
DRAM M-SDRAM,128M,3.3V 166MHz,4Mx32, IT
|
|
240預期7/9/2027
|
|
最少: 1
倍數: 1
|
|
|
SDRAM Mobile
|
128 Mbit
|
|
166 MHz
|
BGA-90
|
4 M x 32
|
8 ns
|
2.7 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
IS42SM32400H
|
Tray
|
|
|
|
DRAM 128M, 1.8V, Mobile SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
- IS42VM32400H-6BLI
- ISSI
-
1:
HK$77.60
-
230預期11/8/2027
|
Mouser 元件編號
870-42VM32400H-6BLI
|
ISSI
|
DRAM 128M, 1.8V, Mobile SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
|
|
230預期11/8/2027
|
|
最少: 1
倍數: 1
|
|
|
SDRAM Mobile
|
|
|
|
BGA-90
|
|
|
|
|
|
|
IS42VM32400H
|
Reel
|
|
|
|
DRAM 512M 32Mx16 333MHz DDR2 1.8V
- IS43DR16320E-3DBLI
- ISSI
-
1:
HK$66.75
-
209預期21/10/2027
|
Mouser 元件編號
870-43DR16320E3DBLI
|
ISSI
|
DRAM 512M 32Mx16 333MHz DDR2 1.8V
|
|
209預期21/10/2027
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR2
|
512 Mbit
|
16 bit
|
333 MHz
|
BGA-84
|
32 M x 16
|
450 ps
|
1.7 V
|
1.9 V
|
- 40 C
|
+ 85 C
|
IS43DR16320E
|
Reel
|
|
|
|
DRAM 2G, 1.35V, DDR3L, 256Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT
- IS43TR82560DL-125KBLI
- ISSI
-
1:
HK$208.54
-
70在途量
|
Mouser 元件編號
870-43T82560DL125KBI
|
ISSI
|
DRAM 2G, 1.35V, DDR3L, 256Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS, IT
|
|
70在途量
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR3L
|
2 Gbit
|
8 bit
|
|
BGA-78
|
256 M x 8
|
20 ns
|
1.425 V
|
1.575 V
|
- 40 C
|
+ 95 C
|
IS43TR82560DL
|
|
|
|
|
DRAM 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 ball BGA (8mmx8mm) ROHS
- IS42S16800J-6BL
- ISSI
-
1:
HK$65.10
-
348預期7/9/2027
|
Mouser 元件編號
870-IS42S16800J-6BL
|
ISSI
|
DRAM 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 ball BGA (8mmx8mm) ROHS
|
|
348預期7/9/2027
|
|
最少: 1
倍數: 1
|
|
|
SDRAM
|
128 Mbit
|
8 bit/16 bit
|
166 MHz
|
BGA-54
|
16 M x 8/8 M x 16
|
6.5 ns
|
3 V
|
3.6 V
|
0 C
|
+ 70 C
|
|
|
|
|
|
DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
- IS42S32800L-7BLI
- ISSI
-
1:
HK$102.26
-
142預期3/11/2026
|
Mouser 元件編號
870-IS42S32800L-7BLI
|
ISSI
|
DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
|
|
142預期3/11/2026
|
|
最少: 1
倍數: 1
|
|
|
SDRAM
|
256 Mbit
|
32 bit
|
143 MHz
|
BGA-90
|
8 M x 32
|
5.5 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
|
|
|
|
|
DRAM 256M, 2.5V, DDR, 16Mx16, 200MHz, 60 ball BGA (8mmx13mm) RoHS, IT
- IS43R16160F-5BLI
- ISSI
-
1:
HK$78.25
-
204預期26/10/2027
|
Mouser 元件編號
870-IS43R16160F-5BLI
|
ISSI
|
DRAM 256M, 2.5V, DDR, 16Mx16, 200MHz, 60 ball BGA (8mmx13mm) RoHS, IT
|
|
204預期26/10/2027
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR
|
|
|
|
BGA-60
|
|
|
|
|
|
|
IS43R16160F
|
|
|
|
|
DRAM Automotive (-40 to +105C), 16M, 3.3V, SDRAM, 1Mx16, 143Mhz, 50 pin TSOP II (400 mil) RoHS
- IS45S16100H-7TLA2
- ISSI
-
1:
HK$60.25
-
117預期19/10/2027
|
Mouser 元件編號
870-IS45S16100H7TLA2
|
ISSI
|
DRAM Automotive (-40 to +105C), 16M, 3.3V, SDRAM, 1Mx16, 143Mhz, 50 pin TSOP II (400 mil) RoHS
|
|
117預期19/10/2027
|
|
最少: 1
倍數: 1
|
|
|
SDRAM
|
16 Mbit
|
16 bit
|
143 MHz
|
TSOP-II-50
|
1 M x 16
|
|
3 V
|
3.6 V
|
- 40 C
|
+ 105 C
|
IS42S16100H
|
Tray
|
|
|
|
DRAM Automotive (-40 to +85C), 64M, 3.3V, SDRAM, 4Mx16, 166MHz, 54 pin TSOP II (400 mil) RoHS
- IS45S16400N-6TLA1
- ISSI
-
1:
HK$51.29
-
108在途量
|
Mouser 元件編號
870-IS45S16400N6TLA1
|
ISSI
|
DRAM Automotive (-40 to +85C), 64M, 3.3V, SDRAM, 4Mx16, 166MHz, 54 pin TSOP II (400 mil) RoHS
|
|
108在途量
|
|
最少: 1
倍數: 1
|
|
|
SDRAM
|
64 Mbit
|
16 bit
|
166 MHz
|
TSOP-II-54
|
4 M x 16
|
5.4 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
|
|
|
|
|
DRAM Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS
- IS45S32400J-6BLA2
- ISSI
-
1:
HK$80.88
-
239在途量
|
Mouser 元件編號
870-IS45S32400J6BLA2
|
ISSI
|
DRAM Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS
|
|
239在途量
|
|
最少: 1
倍數: 1
|
|
|
SDRAM
|
128 Mbit
|
32 bit
|
166 MHz
|
TSOP-II-86
|
4 M x 32
|
5.4 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 105 C
|
|
|
|
|
|
DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
- IS66WVS8M8FALL-104NLI
- ISSI
-
受限供貨情況
|
Mouser 元件編號
870-WVS8M8FALL104NLI
|
ISSI
|
DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Mouser目前不在您的地區出售本產品。
|
|
|
|
|
|
|
PSRAM (Pseudo SRAM)
|
64 Mbit
|
8 bit
|
104 MHz
|
SOIC-8
|
8 M x 8
|
7 ns
|
1.65 V
|
1.95 V
|
- 40 C
|
+ 85 C
|
|
|
|
|
|
DRAM 1G, 1.2/1.8V, LPDDR2, 32Mx32, 533MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT
ISSI IS43LD32320C-18BLI
- IS43LD32320C-18BLI
- ISSI
-
1:
HK$137.03
-
171預期18/5/2027
-
工廠指定訂單
|
Mouser 元件編號
870-43LD32320C18BLI
工廠指定訂單
|
ISSI
|
DRAM 1G, 1.2/1.8V, LPDDR2, 32Mx32, 533MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT
|
|
171預期18/5/2027
|
|
最少: 1
倍數: 1
|
|
|
SDRAM Mobile - LPDDR2
|
|
|
|
BGA-134
|
|
|
|
|
|
|
IS43LD32320C
|
|
|
|
|
DRAM 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 pin Copper TSOP II (400 mil) RoHS, IT
ISSI IS42S16320F-7CTLI
- IS42S16320F-7CTLI
- ISSI
-
1:
HK$151.41
-
108在途量
-
新產品
|
Mouser 元件編號
870-IS42S16320F7CTLI
新產品
|
ISSI
|
DRAM 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 pin Copper TSOP II (400 mil) RoHS, IT
|
|
108在途量
|
|
最少: 1
倍數: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
DRAM
AP Memory APS6404L-SQHXRQ
- APS6404L-SQHXRQ
- AP Memory
-
30,000:
HK$2.49
-
工廠直接付運
-
Mouser新產品
|
Mouser 元件編號
878-APS6404L-SQHXRK
Mouser新產品
|
AP Memory
|
DRAM
|
|
工廠直接付運
|
|
最少: 30,000
倍數: 30,000
:
30,000
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reel
|
|
|
|
DRAM Factory Original 512MB DDR-333MHz ECC 1.8V 184-pin CL2.5 DRAM
- MEM3800-512D=-C
- Amphenol ProLabs
-
1:
HK$4,047.94
-
無庫存前置作業時間 4 週
-
Mouser新產品
|
Mouser 元件編號
46-MEM3800512D=C
Mouser新產品
|
Amphenol ProLabs
|
DRAM Factory Original 512MB DDR-333MHz ECC 1.8V 184-pin CL2.5 DRAM
|
|
無庫存前置作業時間 4 週
|
|
最少: 1
倍數: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MNE
|
|
|
|
|
DRAM DRAM DDR3(L) 4GB 256MX16 1866Mbps 1.35V/1.5V 96-FBGA Commercial
- KTDM4G3C618BGCEAT
- SMARTsemi
-
1:
HK$266.08
-
無庫存前置作業時間 8 週
|
Mouser 元件編號
473-M4G3C618BGCEAT
|
SMARTsemi
|
DRAM DRAM DDR3(L) 4GB 256MX16 1866Mbps 1.35V/1.5V 96-FBGA Commercial
|
|
無庫存前置作業時間 8 週
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR3L
|
4 Gbit
|
16 bit
|
933 MHz
|
FBGA-96
|
256 M x 16
|
|
1.283 V
|
1.575 V
|
0 C
|
+ 85 C
|
KTDM
|
Tray
|
|
|
|
DRAM DRAM DDR4 4GB 512MX8 2666Mbps 1.2V 78-FBGA Commercial
- KTDM4G4B826BGCEAT
- SMARTsemi
-
1:
HK$150.43
-
前置作業時間 3 週
|
Mouser 元件編號
473-M4G4B826BGCEAT
|
SMARTsemi
|
DRAM DRAM DDR4 4GB 512MX8 2666Mbps 1.2V 78-FBGA Commercial
|
|
前置作業時間 3 週
|
|
最少: 1
倍數: 1
|
|
|
SDRAM - DDR4
|
4 Gbit
|
8 bit
|
1.333 GHz
|
FBGA-78
|
512 M x 8
|
|
1.14 V
|
1.26 V
|
0 C
|
+ 85 C
|
KTDM
|
Tray
|
|
|
|
DRAM SDRAM, 256Mb, 3.3V, 16Mx16, 166MHz (166Mbps), 0C to +70C, FBGA-54
- IM2516SDBDBG-6
- Intelligent Memory
-
1:
HK$70.77
-
前置作業時間 8 週
|
Mouser 元件編號
822-IM2516SDBDBG-6
|
Intelligent Memory
|
DRAM SDRAM, 256Mb, 3.3V, 16Mx16, 166MHz (166Mbps), 0C to +70C, FBGA-54
|
|
前置作業時間 8 週
|
|
最少: 1
倍數: 1
|
|
|
SDRAM
|
256 Mbit
|
16 bit
|
166 MHz
|
FBGA-54
|
16 M x 16
|
5 ns
|
3 V
|
3.6 V
|
0 C
|
+ 70 C
|
IM2516SD
|
Tray
|
|
|
|
DRAM SDRAM, 256Mb, 3.3V, 16Mx16, 166Mhz (1666Mbps), -40C to +85C, FBGA-54
- IM2516SDBDBG-6I
- Intelligent Memory
-
1:
HK$82.36
-
前置作業時間 8 週
|
Mouser 元件編號
822-IM2516SDBDBG-6I
|
Intelligent Memory
|
DRAM SDRAM, 256Mb, 3.3V, 16Mx16, 166Mhz (1666Mbps), -40C to +85C, FBGA-54
|
|
前置作業時間 8 週
|
|
最少: 1
倍數: 1
|
|
|
SDRAM
|
256 Mbit
|
16 bit
|
166 MHz
|
FBGA-54
|
16 M x 16
|
5 ns
|
3 V
|
3.6 V
|
- 40 C
|
+ 85 C
|
IM2516SD
|
Tray
|
|