S34ML08G201BHI000

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Mouser No:

727-S34ML08G201BHI00

Mfr. No:

S34ML08G201BHI000

Mfr.:

SkyHigh Memory

Description:

NAND Flash SLC,8Gb,3x,3V,x8,4bit,VLD63,

Datasheet:

S34ML08G201BHI000 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about SkyHigh Memory S34ML08G201BHI000

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SkyHigh Memory
Product Category:	NAND Flash
Delivery Restriction:	Mouser does not sell this product in your region.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	BGA-63
Memory Size:	8 Gbit
Interface Type:	Parallel
Organisation:	1 G x 8
Timing Type:	Asynchronous
Data Bus Width:	8 bit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Supply Current - Max:	35 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Tray
Active Read Current - Max:	30 mA
Brand:	SkyHigh Memory
Moisture Sensitive:	Yes
Product Type:	NAND Flash
Factory Pack Quantity:	210
Subcategory:	Memory & Data Storage
Unit Weight:	5 g

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Datasheet

S34ML08G201BHI000 Datasheet (PDF)

EOL

Product Discontinuation Notification 2026-9-9 (PDF)

PCN

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Compliance Codes

CNHTS:: 8542329090
CAHTS:: 8542320040
USHTS:: 8542320051
JPHTS:: 854232039
KRHTS:: 8542321090
TARIC:: 8542326900
MXHTS:: 8542320299
ECCN:: 3A991.b.1.a

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

S34ML0xGx SLC NAND Flash Memory

SkyHigh Memory S34ML0xGx SLC NAND Flash Memory is the first family of Single-Level Cell (SLC) NAND products using 4x nm floating-gate technology, targeted specifically for data storage in automotive, consumer, and networking applications. The SLC NAND is offered in densities from 1Gb to 8Gb, in 3.0V and 1.8V families that feature high performance, extended temperature range, long-term product support, and stringent reliability demands, such as 1-bit, 4-bit Error Correction Code (ECC). The NAND cell provides the most cost-effective solution for the solid-state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.