SiC MOSFETs

GeneSiC Semiconductor’s G3R™ Silicon Carbide (SiC) MOSFETs offer RDS(ON) levels from 12mΩ to 1000mΩ and robustness for efficiency and system reliability in automotive and industrial applications. These MOSFETs deliver a fast switching frequency, increased power density, reduced ringing (EMI), and a compact size. The G3R SiC MOSFETs are offered in optimized low-inductance discrete packages (SMD and through-hole). The modules are highly optimized for power system designs that require elevated efficiency levels at all operating temperatures and ultra-fast switching speeds with ultra-low losses. GeneSiC SiC MOSFETs provide faster switching and lower ON resistance than silicon-based products. Additional features include superior electric characteristics at high temperatures and significantly lower switching loss, allowing smaller peripheral components to be used.

結果: 8
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式
GeneSiC Semiconductor 碳化矽MOSFET 1200V 12mohm TO-247-4 G3R SiC MOSFET 1,614庫存量
HK$509.72
HK$474.54
HK$461.31
HK$456.87
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 111 A 12 mOhms - 10 V, + 22 V 2.7 V 288 nC - 55 C + 175 C 567 W Enhancement
GeneSiC Semiconductor 碳化矽MOSFET 1700V 450mohm TO-247-3 G3R SiC MOSFET 1,702庫存量
HK$59.27
HK$53.27
HK$51.05
HK$47.84
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.7 kV 7 A 450 mOhms - 5 V, + 15 V 2.7 V 13 nC - 55 C + 175 C 70 W Enhancement
GeneSiC Semiconductor 碳化矽MOSFET 1700V 450mohm TO-263-7 G3R SiC MOSFET 800庫存量
帶狀裁切
HK$66.09
HK$59.60
HK$57.13
HK$53.68
捲
HK$48.42
最少: 1
倍數: 1
: 800
SMD/SMT TO-263-7 1 Channel 1.7 kV 8 A 630 mOhms - 5 V, + 15 V 2.7 V 13 nC - 55 C + 175 C 71 W Enhancement
GeneSiC Semiconductor 碳化矽MOSFET 1700V 20mohm TO-247-4 G3R SiC MOSFET 53庫存量
150預期21/4/2027
HK$881.18
HK$817.31
HK$817.07
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.7 kV 101 A 20 mOhms - 5 V, + 15 V 2.7 V 256 nC - 55 C + 175 C 569 W Enhancement
GeneSiC Semiconductor 碳化矽MOSFET 1200V 30mohm TO-247-4 G3R SiC MOSFET 289庫存量
HK$185.20
HK$170.15
HK$164.48
HK$156.26
HK$154.21
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 70 A 30 mOhms - 5 V, + 15 V 2.7 V 118 nC - 55 C + 175 C 281 W Enhancement
GeneSiC Semiconductor 碳化矽MOSFET 1700V 45mohm TO-247-4 G3R SiC MOSFET 109庫存量
HK$271.84
HK$249.39
HK$241.01
HK$233.20
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.7 kV 48 A 45 mOhms - 5 V, + 15 V 2.7 V 106 nC - 55 C + 175 C 284 W Enhancement
GeneSiC Semiconductor 碳化矽MOSFET 1700V 160mohm TO-247-3 G3R SiC MOSFET 5庫存量
1,800在途量
HK$100.53
HK$90.91
HK$87.38
HK$82.20
HK$79.41
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.7 kV 17 A 160 mOhms - 5 V, + 15 V 2.7 V 29 nC - 55 C + 175 C 138 W Enhancement
GeneSiC Semiconductor 碳化矽MOSFET 1200V 40mohm TO-247-4 G3R SiC MOSFET 無庫存前置作業時間 26 週
HK$145.25
HK$132.67
HK$127.99
HK$121.16
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A 40 mOhms - 5 V, + 15 V 2.7 V 88 nC - 55 C + 175 C 228 W Enhancement