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Results: 6

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Vds - Drain-Source Breakdown Voltage

Id - Continuous Drain Current

Rds On - Drain-Source Resistance

Vgs - Gate-Source Voltage

Vgs th - Gate-Source Threshold Voltage

Qg - Gate Charge

Pd - Power Dissipation

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Select	Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (HKD) Filter the results in the table by unit price based on your quantity.	Qty.	RoHS	ECAD Model	Technology	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Packaging
	MOSFETs HIGH POWER_NEW IPW65R060CFD7XKSA1 Infineon Technologies 1: HK$75.46 268In Stock NRND	Mfr. Part No. IPW65R060CFD7XKSA1 Mouser Part No 726-IPW65R060CFD7SA1 NRND	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	268In Stock	HK$75.46 HK$44.47 HK$37.48 HK$36.33 HK$34.20	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	650 V	36 A	60 mOhms	10 V	3.5 V	68 nC	- 55 C	+ 150 C	171 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPP65R041CFD7XKSA1 Infineon Technologies 1: HK$82.04 300In Stock	Mfr. Part No. IPP65R041CFD7XKSA1 Mouser Part No 726-IPP65R041CFD7XKS	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	300In Stock	HK$82.04 HK$56.06 HK$46.28 HK$41.43 HK$38.96	Min.: 1 Mult.: 1			Si	Through Hole		N-Channel	1 Channel	650 V	50 A	41 mOhms	20 V	4.5 V	102 nC	- 55 C	+ 150 C	227 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPW65R029CFD7XKSA1 Infineon Technologies 1: HK$97.90 126In Stock	Mfr. Part No. IPW65R029CFD7XKSA1 Mouser Part No 726-IPW65R029CFD7XKS	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	126In Stock	HK$97.90 HK$66.75 HK$65.02	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	700 V	69 A	29 mOhms	20 V	4.5 V	145 nC	- 55 C	+ 150 C	305 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPW65R041CFD7XKSA1 Infineon Technologies 1: HK$89.84 284In Stock 720On Order	Mfr. Part No. IPW65R041CFD7XKSA1 Mouser Part No 726-IPW65R041CFD7XKS	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	284In Stock 720On Order	HK$89.84 HK$48.91 HK$45.29 HK$45.05	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	700 V	68.5 A	41 mOhms	20 V	4 V	102 nC	- 55 C	+ 150 C	500 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPZA65R029CFD7XKSA1 Infineon Technologies 1: HK$123.79 181In Stock	Mfr. Part No. IPZA65R029CFD7XKSA1 Mouser Part No 726-IPZA65R029CFD7XK	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	181In Stock	HK$123.79 HK$69.71 HK$68.47	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-4	N-Channel	1 Channel	650 V	69 A	29 mOhms	20 V	4.5 V	145 nC	- 55 C	+ 150 C	305 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPP65R060CFD7XKSA1 Infineon Technologies 1: HK$66.66 41In Stock 500Expected 10/12/2026	Mfr. Part No. IPP65R060CFD7XKSA1 Mouser Part No 726-IPP65R060CFD7SA1	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	41In Stock 500Expected 10/12/2026	HK$66.66 HK$36.00 HK$33.04 HK$30.33	Min.: 1 Mult.: 1			Si	Through Hole	TO-220-3	N-Channel	1 Channel	650 V	36 A	60 mOhms	10 V	4.5 V	68 nC	- 55 C	+ 150 C	171 W	Enhancement	Tube