600V 4th Gen PrestoMOS™ Super Junction MOSFETs

ROHM Semiconductor 600V 4th Gen PrestoMOS™ Super Junction MOSFETs utilize original patented technology to accelerate the parasitic diode, achieving ultra-fast reverse recovery characteristics to achieve low power consumption. The PrestoMOS design enables a reduction in power loss of about 58% at light loads when compared with IGBT implementations. Additionally, raising the reference voltage needed to turn ON the MOSFET prevents self-turn-ON, which is one of the main causes of loss. The optimized built-in parasitic diode improves the soft recovery index specific to Super Junction MOSFETs, which reduces noise that can lead to malfunction.

結果: 14
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 封裝
ROHM Semiconductor MOSFET TO220 650V 165A N-CH MOSFET 1,985庫存量
HK$77.35
HK$42.42
HK$39.05
HK$36.99
最少: 1
倍數: 1
Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 23 A 71 mOhms 30 V 6.5 V 80 nC - 55 C + 150 C 100 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 39A N-CH MOSFET 1,891庫存量
HK$33.54
HK$18.33
HK$16.69
HK$13.65
最少: 1
倍數: 1
Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 8 A 300 mOhms 30 V 6.5 V 21 nC - 55 C + 150 C 54 W Enhancement Tube
ROHM Semiconductor MOSFET Transistor MOSFET, Nch 600V 77A 4th Gen, Fast Recover 700庫存量
HK$118.29
HK$68.64
HK$68.14
HK$64.53
最少: 1
倍數: 1
Si Through Hole TO-3PF-3 N-Channel 1 Channel 600 V 29 A 51 Ohms 30 V 6.5 V 108 nC - 55 C + 150 C 113 W Enhancement Tube
ROHM Semiconductor MOSFET TO252 650V 39A N-CH MOSFET 5,047庫存量
帶狀裁切
HK$29.76
HK$16.36
HK$14.80
HK$12.25
HK$12.17
捲
HK$11.43
最少: 1
倍數: 1
: 2,500
Si SMD/SMT TO-252-3 N-Channel 1 Channel 600 V 13 A 300 mOhms 30 V 6.5 V 21 nC - 55 C + 150 C 131 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET TO3P 650V 165A N-CH MOSFET 567庫存量
HK$83.93
HK$60.09
HK$55.32
HK$54.91
HK$52.03
最少: 1
倍數: 1
Si Through Hole TO-3PF-3 N-Channel 1 Channel 600 V 23 A 71 mOhms 30 V 6.5 V 80 nC - 55 C + 150 C 99 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 12A N-CH MOSFET 1,649庫存量
HK$36.09
HK$19.32
HK$17.51
HK$15.04
HK$14.14
最少: 1
倍數: 1
Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 20 A 185 mOhms 30 V 6 V 28 nC - 55 C + 150 C 62 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 10A N-CH MOSFET 1,940庫存量
HK$29.76
HK$24.66
HK$21.13
HK$15.78
最少: 1
倍數: 1
Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 10 A 204 mOhms 30 V 6.5 V 27 nC - 55 C + 150 C 61 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 105A N-CH MOSFET 1,933庫存量
HK$53.76
HK$28.44
HK$26.06
HK$24.33
HK$22.77
最少: 1
倍數: 1
Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 17 A 114 mOhms 30 V 6.5 V 50 nC - 55 C + 150 C 81 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 105A N-CH MOSFET 890庫存量
HK$64.53
HK$35.59
HK$32.63
HK$31.89
HK$29.92
最少: 1
倍數: 1
Si Through Hole TO-220AB-3 N-Channel 1 Channel 600 V 35 A 114 mOhms 30 V 6.5 V 50 nC - 55 C + 150 C 347 W Enhancement Tube
ROHM Semiconductor MOSFET TO247 650V 231A N-CH MOSFET 1,090庫存量
HK$132.18
HK$76.20
HK$75.95
最少: 1
倍數: 1
Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 77 A 51 mOhms 30 V 6.5 V 108 nC - 55 C + 150 C 781 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 72A N-CH MOSFET 2,003庫存量
HK$53.35
HK$28.28
HK$25.81
HK$22.61
最少: 1
倍數: 1
Si Through Hole TO-220AB-3 N-Channel 1 Channel 600 V 24 A 153 mOhms 30 V 6.5 V 38 nC - 55 C + 150 C 245 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 72A N-CH MOSFET 1,969庫存量
HK$48.09
HK$25.24
HK$23.02
HK$19.65
最少: 1
倍數: 1
Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 13 A 153 mOhms 30 V 6.5 V 38 nC - 55 C + 150 C 70 W Enhancement Tube
ROHM Semiconductor MOSFET TO247 650V 165A N-CH MOSFET 1,102庫存量
HK$110.15
HK$61.81
HK$59.43
最少: 1
倍數: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 55 A 71 mOhms 30 V 6.5 V 80 nC - 55 C + 150 C 543 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 42A N-CH MOSFET 24庫存量
HK$38.31
HK$19.89
HK$18.00
HK$14.80
最少: 1
倍數: 1
Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 14 A 260 mOhms 30 V 6 V 20 nC - 55 C + 150 C 54 W Enhancement Tube