NDSH20120C

Name: onsemi NDSH20120C
Brand: onsemi
SKU: 863-NDSH20120C
Price: 87.54 HKD
Availability: InStock

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請參閱產品規格

Mouser 編號：

863-NDSH20120C

製造商編號：

NDSH20120C

製造商：

onsemi

說明：

碳化矽肖特基二極管 SIC DIODE GEN2.0 1200V TO247-2L

規格書:

NDSH20120C 規格書

ECAD模型:

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商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	碳化矽肖特基二極管
RoHS:
REACH - SVHC:
安裝風格:	Through Hole
封裝/外殼:	TO-247-2
配置:	Single
If - 順向電流:	20 A
Vrrm - 重複反向電壓:	1.2 kV
Vf - 順向電壓:	1.38 V
Ifsm - 順向浪湧電流:	119 A
Ir - 反向電流:	200 uA
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
系列:	NDSH20120C
封裝:	Tube
品牌:	onsemi
Pd - 功率消耗 :	214 W
產品類型:	SiC Schottky Diodes
原廠包裝數量:	30
子類別:	Diodes & Rectifiers
公司名稱:	EliteSiC
Vr - 反向電壓:	1.2 kV

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所選屬性: 0

篩選文檔:

規格書

NDSH20120C 規格書

PCN

Product Change Notification (PDF)

Material Composition Disclosure

合規守則

CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

原產地分類

原產國:: 大韓民國
封裝原產國:: 中國
擴散國:: 大韓民國

出貨時，國家可能會有所變更。

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

NDSH20120C Silicon Carbide (SiC) Diodes

onsemi NDSH20120C Silicon Carbide (SiC) Diodes provide superior switching performance and higher reliability than silicon. The onsemi NDSH20120C features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.