TP65H070G4RS-TR

Name: Renesas Electronics TP65H070G4RS-TR
Brand: Renesas Electronics
SKU: 227-TP65H070G4RS-TR
Price: 70.12 HKD
Availability: InStock

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Mouser 編號：

227-TP65H070G4RS-TR

製造商編號：

TP65H070G4RS-TR

製造商：

Renesas Electronics

說明：

氮化鎵場效應管 650V, 70mohm GaN FET in TOLT

規格書:

TP65H070G4RS-TR 規格書

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商品屬性	屬性值	選擇屬性
製造商:	Renesas Electronics
產品類型:	氮化鎵場效應管
RoHS:
安裝風格:	SMD/SMT
封裝/外殼:	TOLT-16
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	29 A
Rds On - 漏-源電阻:	85 mOhms
Vgs - 閘極-源極電壓:	- 20 V, + 20 V
Vgs th - 門源門限電壓 :	4.8 V
Qg - 閘極充電:	9 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	96 W
通道模式:	Enhancement
公司名稱:	SuperGaN
技術:	GaN
品牌:	Renesas Electronics
配置:	Single
下降時間:	7.2 ns
濕度敏感:	Yes
封裝:	Reel
封裝:	Cut Tape
產品類型:	GaN FETs
上升時間:	6.2 ns
系列:	Gen IV SuperGaN
原廠包裝數量:	1300
子類別:	Transistors
標準斷開延遲時間:	56 ns
標準開啟延遲時間:	43.4 ns

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規格書

TP65H070G4RS-TR 規格書

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合規守則

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

原產地分類

原產國:: 中國
封裝原產國:: 無資料
擴散國:: 無資料

出貨時，國家可能會有所變更。

TP65H070G4RS 650V SuperGaN® FET in TOLT

Renesas Electronics TP65H070G4RS 650V SuperGaN^® FET in TOLT features an on-resistance R_DS(on) of 72mΩ typical in a top-side-cooled, surface-mount TOLT package that meets the JEDEC standard MO-332. The TOLT package offers thermal management flexibility, especially in systems that do not allow for conventional surface-mount devices with bottom-side cooling. The TP65H070G4RS is a normally-off device that combines low-voltage silicon MOSFET and high-voltage GaN HEMT technologies to deliver superior reliability and performance. The Gen IV SuperGaN platform leverages advanced epitaxial (epi) and patented design technologies to streamline manufacturability and enhance efficiency compared to silicon. It achieves this by reducing gate charge, crossover loss, output capacitance, and reverse recovery charge. Renesas Electronics TP65H070G4RS 650V SuperGaN TOLT FET is ideal for datacom, industrial, computing, and other applications.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.