STripFET™ F7 Power MOSFETs

STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. STMicroelectronics STripFET F7 feature high avalanche ruggedness.

結果: 46
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱 封裝
STMicroelectronics MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET 749庫存量
1,320預期31/8/2026
最少: 1
倍數: 1
: 1,000

Si SMD/SMT H2PAK-2 N-Channel 1 Channel 100 V 180 A 2.3 mOhms - 20 V, 20 V 3.5 V 180 nC - 55 C + 175 C 315 W Enhancement AEC-Q101 STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET 2,031庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 180 A 2.3 mOhms - 20 V, 20 V 3.5 V 180 nC - 55 C + 175 C 315 W Enhancement AEC-Q101 STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 100V 0.0062 Ohm 19A STripFET VII DG 2,352庫存量
2,275預期31/8/2026
最少: 1
倍數: 1
: 3,000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 100 V 19 A 7.3 mOhms - 20 V, 20 V 4 V 61 nC - 55 C + 175 C 5 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-CH 80V 4 mOhm 24A STripFET VII 3,764庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 80 V 120 A 3.6 mOhms - 20 V, 20 V 2.5 V 96 nC - 55 C + 175 C 135 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-CH 100V 0.020Ohm 10A STripFET VII 3,511庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 100 V 20 A 24 mOhms - 20 V, 20 V 4 V 14 nC - 55 C + 175 C 5 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3 6,461庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT PowerFLAT-3.3x3.3-8 N-Channel 1 Channel 100 V 7 A 35 mOhms - 20 V, 20 V 4.5 V 14 nC - 55 C + 150 C 2.9 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 100V 2.7 mOhm 180A STripFET VII 5,110庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 180 A 2.7 mOhms - 20 V, 20 V 2.5 V 180 nC - 55 C + 175 C 315 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 pac 61庫存量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT H2PAK-2 N-Channel 1 Channel 80 V 120 A 3.7 mOhms - 20 V, 20 V 4.5 V 120 nC - 55 C + 175 C 250 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-CH 80V 17mOhm 180A STripFET VII 129庫存量
1,000預期13/8/2027
最少: 1
倍數: 1
: 1,000

Si SMD/SMT TO-263-7 N-Channel 1 Channel 80 V 180 A 2.1 mOhms - 20 V, 20 V 2 V 193 nC - 55 C + 175 C 315 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150 837庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 80 A 8 mOhms - 20 V, 20 V 4 V 56 nC - 55 C + 175 C 150 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-Ch 100V 2.5mOhm 180A STripFET VII 79庫存量
1,000預期30/10/2026
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 110 A 3.2 mOhms - 20 V, 20 V 4.5 V 160 nC - 55 C + 175 C 300 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFET
8,761在途量
最少: 1
倍數: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 80 A 8 mOhms - 20 V, 20 V 4.5 V 61 nC - 55 C + 175 C 150 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 100 V, 3,4mOhm typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 pack
1,000預期25/8/2026
最少: 1
倍數: 1
: 1,000

Si SMD/SMT H2PAK-2 N-Channel 1 Channel 100 V 110 A 3.9 mOhms - 20 V, 20 V 4.5 V 117 nC - 55 C + 175 C 250 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-CH 100V 0.009Ohm 16A STripFET VII
5,987在途量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 100 V 16 A 10.5 mOhms - 20 V, 20 V 3 V 39 nC - 55 C + 175 C 5 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 100V 0.0036Ohm typ. 110A
5,000預期27/8/2026
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 110 A 4.2 mOhms - 20 V, 20 V 4.5 V 117 nC - 55 C + 175 C 250 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-Ch 80 V 2.1 mOhm 180 A STripFET VI DG
1,000預期16/10/2026
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 180 A 2.5 mOhms - 20 V, 20 V 4 V 193 nC - 55 C + 175 C 315 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-chanl 80 V 33 mOhm typ 90 A Pwr MOSFET
997預期11/9/2026
最少: 1
倍數: 1
: 1,000

Si SMD/SMT H2PAK-2 N-Channel 1 Channel 80 V 90 A 4 mOhms - 20 V, 20 V 4.5 V 96 nC - 55 C + 175 C 200 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3
5,456預期19/3/2027
最少: 1
倍數: 1
: 3,000

Si SMD/SMT PowerFLAT-3.3x3.3-8 N-Channel 1 Channel 100 V 4.5 A 70 mOhms - 20 V, 20 V 4.5 V 7.8 nC - 55 C + 150 C 2.9 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-CH 80V 17mOhm 180A STripFET VII 前置作業時間 22 週
最少: 1
倍數: 1
: 1,000

Si SMD/SMT H2PAK-2 N-Channel 1 Channel 80 V 180 A 2.1 mOhms - 20 V, 20 V 2 V 193 nC - 55 C + 175 C 315 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 60 V, 1.9 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 無庫存前置作業時間 26 週
最少: 1
倍數: 1
: 3,000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 60 V 120 A 2.4 mOhms - 20 V, 20 V 2 V 79.5 nC - 55 C + 175 C 166 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET 前置作業時間 22 週
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 180 A 2.3 mOhms - 20 V, 20 V 3.5 V 180 nC - 55 C + 175 C 315 W Enhancement AEC-Q101 STripFET Tube