A5Gx Airfast RF Power GaN Transistors

NXP Semiconductors  A5Gx Airfast RF Power GaN Transistors are 85W and 112W asymmetrical Doherty RF power GaN transistors. The NXP Semiconductors  A5Gx transistors are ideal for cellular base stations requiring wide bandwidths. The devices' performance is guaranteed within the range of the specified frequency for each part, but not outside it.

Results: 6
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NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 717-850 MHz, 112 W Avg., 50 V
Datasheet
65In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C


NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 1805-1880 MHz, 85 W Avg., 48 V
Datasheet
213In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C

NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 1930 1995 MHz, 85 W Avg., 48 V
Datasheet
35In Stock
Min.: 1
Mult.: 1
: 250



NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 2496-2690 MHz, 85 W Avg., 48 V
Datasheet
2In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C


NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 2110-2200 MHz, 85 W Avg., 48 V
Datasheet
208Expected 13/8/2026
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C


NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 865-960 MHz, 112 W Avg., 50 V
Datasheet
Non-Stocked Lead-Time 53 Weeks
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C