結果: 119
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
Infineon Technologies MOSFET LOW POWER_NEW 1庫存量
500預期12/11/2026
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 214 mOhms 20 V 3 V 18 nC - 55 C + 150 C 53 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW
8,876在途量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 640 mOhms 20 V 2.5 V 17 nC - 55 C + 150 C 27 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW
10,118預期28/1/2027
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9 A 305 mOhms 20 V 3 V 13 nC - 55 C + 150 C 41 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER
12,477預期22/4/2027
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 700 V 6 A 740 mOhms 16 V 2.5 V 6.8 nC - 40 C + 150 C 30.5 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER
14,898在途量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 700 V 12.5 A 300 mOhms 16 V 2.5 V 16.4 nC - 40 C + 150 C 7.2 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW
2,999在途量
最少: 1
倍數: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 950 V 9 A 750 mOhms 20 V 2.5 V 23 nC - 55 C + 150 C 73 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW
2,818在途量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 48 A 49 mOhms 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW
880在途量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 214 mOhms 20 V 3 V 18 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER
2,500預期22/10/2026
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12.5 A 300 mOhms 16 V 2.5 V 16.4 nC - 40 C + 150 C 26.5 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW
1,000在途量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20 A 160 mOhms 20 V 3.5 V 31 nC - 55 C + 150 C 81 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW
1,000預期12/11/2026
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 305 mOhms 20 V 3 V 13 nC - 55 C + 150 C 41 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW
500在途量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 1.4 Ohms 30 V 3 V 10 nC - 50 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 無庫存前置作業時間 8 週
最少: 1
倍數: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 3 A 1.7 Ohms 20 V 2.5 V 9 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 無庫存前置作業時間 26 週
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 14 A 450 mOhms 20 V 2.5 V 35 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 無庫存前置作業時間 26 週
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 9 A 750 mOhms 20 V 2.5 V 23 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 無庫存前置作業時間 15 週
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 13 A 310 mOhms 30 V 2.5 V 30 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 無庫存前置作業時間 19 週
最少: 1,500
倍數: 1,500

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 8 A 510 mOhms 20 V 2.5 V 20 nC - 55 C + 150 C 60 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 無庫存前置作業時間 52 週
最少: 1
倍數: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 37 A 69 mOhms 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET LOW POWER_NEW 無庫存前置作業時間 18 週
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 310 mOhms 20 V 2.5 V 30 nC - 55 C + 150 C 84 W Enhancement CoolMOS Tube