|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
HK$296.50
-
1,043庫存量
-
1,000預期3/9/2026
|
Mouser 元件編號
726-IMBG120R008M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,043庫存量
1,000預期3/9/2026
|
|
|
HK$296.50
|
|
|
HK$222.60
|
|
|
HK$222.60
|
|
最少： 1
倍數： 1
最大： 10
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
HK$158.15
-
3,135庫存量
|
Mouser 元件編號
726-IMBG120R017M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3,135庫存量
|
|
|
HK$158.15
|
|
|
HK$112.70
|
|
|
HK$100.45
|
|
|
HK$99.71
|
|
|
HK$92.64
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
HK$214.05
-
558庫存量
-
1,000預期3/9/2026
|
Mouser 元件編號
726-IMBG120R012M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
558庫存量
1,000預期3/9/2026
|
|
|
HK$214.05
|
|
|
HK$155.19
|
|
|
HK$147.71
|
|
|
HK$145.82
|
|
|
HK$134.81
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
HK$133.00
-
359庫存量
|
Mouser 元件編號
726-IMBG120R022M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
359庫存量
|
|
|
HK$133.00
|
|
|
HK$93.79
|
|
|
HK$80.39
|
|
|
HK$80.31
|
|
|
HK$75.05
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
HK$114.01
-
1,673庫存量
|
Mouser 元件編號
726-IMBG120R026M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,673庫存量
|
|
|
HK$114.01
|
|
|
HK$79.73
|
|
|
HK$65.84
|
|
|
HK$61.49
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
HK$89.02
-
316庫存量
|
Mouser 元件編號
726-IMBG120R040M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
316庫存量
|
|
|
HK$89.02
|
|
|
HK$61.40
|
|
|
HK$47.68
|
|
|
HK$44.55
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
HK$55.65
-
616庫存量
|
Mouser 元件編號
726-IMBG120R116M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
616庫存量
|
|
|
HK$55.65
|
|
|
HK$35.92
|
|
|
HK$27.04
|
|
|
HK$25.56
|
|
|
HK$23.92
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
HK$47.51
-
1,640庫存量
|
Mouser 元件編號
726-IMBG120R181M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,640庫存量
|
|
|
HK$47.51
|
|
|
HK$31.73
|
|
|
HK$22.69
|
|
|
HK$20.71
|
|
|
HK$19.40
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
HK$42.91
-
6,004庫存量
|
Mouser 元件編號
726-IMBG120R234M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
6,004庫存量
|
|
|
HK$42.91
|
|
|
HK$28.52
|
|
|
HK$20.30
|
|
|
HK$18.08
|
|
|
HK$18.00
|
|
|
HK$16.85
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
HK$66.99
-
41庫存量
-
2,000在途量
|
Mouser 元件編號
726-IMBG120R078M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
41庫存量
2,000在途量
|
|
|
HK$66.99
|
|
|
HK$45.05
|
|
|
HK$34.85
|
|
|
HK$32.22
|
|
|
HK$29.18
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
HK$74.14
-
1,968庫存量
|
Mouser 元件編號
726-IMBG120R053M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,968庫存量
|
|
|
HK$74.14
|
|
|
HK$50.64
|
|
|
HK$37.48
|
|
|
HK$35.02
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
香港