CMPA5259080S

Images are for reference only
See Product Specifications

Mouser No:

941-CMPA5259080S

Mfr. No:

CMPA5259080S

Mfr.:

MACOM

Description:

RF Amplifier MMIC, GaN HEMT, QFN, G40V4, 5.2-5.9GHz,

Datasheet:

CMPA5259080S Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about MACOM CMPA5259080S

Shipping Alert:

Mouser does not sell this product in your region.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	RF Amplifier
Delivery Restrictions:	Mouser does not sell this product in your region.
RoHS:
Operating Frequency:	5 GHz to 5.9 GHz
Gain:	21.4 dB
Mounting Style:	SMD/SMT
Package/Case:	QFN-48
Technology:	GaN
Maximum Operating Temperature:	+ 225 C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	MACOM
Moisture Sensitive:	Yes
Product Type:	RF Amplifier
Factory Pack Quantity:	10
Subcategory:	Wireless & RF Integrated Circuits

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

CMPA5259080S Datasheet (PDF)

PCN

This functionality requires JavaScript to be enabled.

Compliance Codes

CAHTS:: 8542330000
USHTS:: 8542330001
TARIC:: 8542330000
MXHTS:: 8542330299
ECCN:: 3A001.b.2.a.4

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

CMPA5259080S GaN MMIC Power Amplifier

MACOM CMPA5259080S GaN MMIC Power Amplifier contains a two-stage reactively matched amplifier design approach for high power and power-added efficiency. The CMPA5259080S features 29dB small-signal gain, 110W typical PSAT, and an operation up to 40V. The CMPA5259080S gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) is available in a 7mm x 7mm surface mount (QFN package). It is ideal for civil and military pulsed radar amplifier applications.