DMWSH120Hx 1200V N-Channel Power MOSFETs

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs are silicon carbide MOSFETs designed to minimize the on-state resistance and maintain excellent switching performance. These MOSFETs feature low input capacitance, up to 100μA zero gate voltage drain current, up to ±250nA gate-source leakage, and a high BVDSS rating for power applications. The DMWSH120Hx MOSFETs operate within the -55°C to 175°C temperature range and comply with the UL 94V-0 flammability classification rating. These power MOSFETs are ideal for EV high-power DC-DC converters, EV charging systems, solar inverters, AC-DC traction inverters, and automotive motor drivers.

結果: 10
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式
Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS 20庫存量
HK$266.00
HK$179.20
HK$163.74
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 97.4 A 28.5 mOhms - 8 V, + 19 V 3.6 V 175 nC - 55 C + 175 C 405 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS 17庫存量
HK$266.00
HK$179.20
HK$166.04
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 100 A 28.5 mOhms - 8 V, + 19 V 3.6 V 173.7 nC - 55 C + 175 C 429 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS 20庫存量
HK$314.42
HK$216.84
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 100 A 28.5 mOhms - 8 V, + 19 V 2.5 V 173.7 nC - 55 C + 175 C 429 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS 31庫存量
HK$158.56
HK$95.43
HK$89.60
最少: 1
倍數: 1
Through Hole To-247-3 1 Channel 1.2 kV 72.7 A 43 mOhms - 8 V, + 19 V 2.5 V 105 nC - 55 C + 175 C 341 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS 78庫存量
HK$103.08
HK$58.44
HK$54.09
HK$52.53
HK$50.39
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 41 A 97.5 mOhms - 4 V, + 15 V 3.5 V 50.9 nC - 55 C + 170 C 246 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS 60庫存量
HK$127.16
HK$73.24
HK$68.06
HK$67.65
HK$65.76
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 41 A 97.5 mOhms - 4 V, + 15 V 3.5 V 50.9 nC - 55 C + 175 C 246 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS 87庫存量
HK$103.08
HK$58.44
HK$58.36
HK$52.53
HK$47.10
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 40 A 97.5 mOhms - 4 V, + 15 V 3.5 V 51.1 nC - 55 C + 175 C 235 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS 60庫存量
HK$127.16
HK$73.24
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 40 A 97.5 mOhms - 4 V, + 15 V 3.5 V 51.1 nC - 55 C + 175 C 235 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS 120工廠有庫存
HK$317.62
HK$207.80
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 97.4 A 28.5 mOhms - 8 V, + 19 V 3.6 V 175 nC - 55 C + 175 C 405 W Enhancement


Diodes Incorporated 碳化矽MOSFET SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS 100工廠有庫存
HK$84.58
HK$55.57
HK$46.94
HK$44.72
最少: 1
倍數: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 38.2 A 90 mOhms - 4 V, + 15 V 3.5 V 54.6 nC - 55 C + 175 C 197 W Enhancement