Toshiba TK095N65Z5 Silicon N-Channel (DTMOSVI) MOSFET
Toshiba TK095N65Z5 Silicon N-Channel (DTMOSVI) MOSFET is a 650V, 95mΩ high-speed MOSFET in a TO-247 package. Designed for use in switching voltage regulator applications, TK095N65Z5 offers a fast recovery time (115ns typical) and a low drain-source on-resistance (0.079Ω typical). This MOSFET provides high-speed switching properties with a low capacitance.
Features
- Fast 115ns typical reverse recovery time
- Low 0.079Ω typical drain-source on-resistance [RDS(ON)]
- High-speed switching properties with lower capacitance
- Enhancement mode: Vth = 3.5V to 4.5V (VDS = 10V, ID = 1.27mA)
- DTMOSⅥ generation
Specifications
- 650V maximum drain-source voltage
- ±30V maximum gate-source voltage
- Drain current
- 29A maximum DC
- 116A maximum pulsed
- 230W maximum power disipation
- Single-pulse avalanche
- 342mJ maximum energy
- 5.8A maximum current
- Reverse drain current
- 29A maximum DC
- 116A maximum pulsed
- 4.5V maximum gate threshold voltage
- 2880pF typical input capacitance
- 50nC typical total gate charge
- 3Ω typical gate resistance
- +150°C maximum channel temperature
- Thermal resistance
- 0.543°C/W channel-to-case
- 50°C/W channel-to-ambient
- 0.8Nm maximum mounting torque
- 15.94mm x 20.95mm x 5.02mm TO-247 package
Package & Internal Circuit
Related MOSFETs
Toshiba DTMOSVI MOSFET
650V功率MOSFET提供0.033Ω（典型值）低漏源導通電阻。
發佈日期: 2024-03-12
| 更新日期: 2024-04-10