Toshiba SSM6N951L/SSM10N954L Field Effect Transistors
Toshiba SSM6N951L/SSM10N954L Field Effect Transistors promote high-efficiency charging/discharging in small cell batteries. Improving a battery's reliability with low thermal impact is a key requirement for Li-ion batteries adopting fast charging. MOSFETs are generally used as switches in the charge/discharge protection circuit and are often built into a Li-ion battery pack.
Occasional reliability challenges may arise, such as decreasing battery cell voltage, causing gate drive voltage to decrease, or increasing temperature due to large currents. In these cases, RON, a key MOSFET characteristic, worsens, directly impacting the efficiency of charging /discharging features.
Toshiba's drain common 12V N-channel MOSFETs SSM6N951L and SSM10N954L are made by a dedicated fine process to minimize RON dependency on gate voltage and temperature characteristics. As such, these MOSFETs have flat RON characteristics.
Features
- Ultra-low on resistance
- SSM6N951L RSSON = 4.6mΩ typical @ 3.8V
- SSM10N954L RSSON = 2.2mΩ typical @ 3.8V
- Low gate leak current: IGSS ±1uA maximum @ ±8V
- Ultra small and thin package
- SSM6N951L 2.14mm x 1.67mm x 0.11mm typical
- SSM10N954L 2.98mm x 1.49mm x 0.11mm typical
Applications
- Smartphone
- Earphone
- Wearable
- Lithium-ion secondary batteries
- Mobile
Pin Assignment
Equivalent Circuit
SSM10N954L RSS(ON) – IS Curves
View Results ( 2 ) Page
| 零件編號 | 規格書 | 說明 |
|---|---|---|
| SSM10N954L,EFF |  |
MOSFET TCSPAC N-CH 12V 13.5A |
| SSM6N951L,EFF | |
MOSFET Small Signal MOSFET Rdson: 4.4mOhm Vgs: 4.5V |
發佈日期: 2020-09-09
| 更新日期: 2024-11-20