Toshiba DF2BxM4ASL ESD Protection Diodes
Toshiba DF2BxM4ASL ESD Protection Diodes protect semiconductor devices like mobile device interfaces and other applications against static electricity and noise. These ESD protection diodes utilize snapback characteristics, providing low dynamic resistance and superior protective performance. The DF2BxM4ASL diodes optimum the high-speed signal application for low capacitance performance. These ESD protection diodes are stored at -55°C to 150°C. The Toshiba DF2BxM4ASL diodes function at 150°C junction temperature, 30W peak pulse power, and 2A peak pulse current. Typical applications include smartphones, tablets, notebook PCs, and desktop PCs.
Features
- The compact package suits the use in high-density board layouts such as in mobile devices
- Low dynamic resistance protects semiconductor devices from static electricity and noise
- Snapback characteristics realizing low clamping voltage protect semiconductor devices
- Protects devices with its high ESD performance
Specifications
- DF2B5M4ASL:
- 3.6V working peak reverse voltage
- 4V to 6V holding voltage range
- DF2B6M4ASL:
- 5.5V working peak reverse voltage
- 5.6V to 8V holding voltage range
- -55°C to 150°C storage temperature range
- 150°C junction temperature
- 30W peak pulse power
- 2A peak pulse current
Applications
- Mobile equipment
- Smartphones
- Tablets
- Notebook PCs
- Desktop PCs
Circuit Diagram
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| 零件編號 | 規格書 | 說明 | 操作電壓 | 擊穿電壓 | Vesd - 電壓靜電放電觸點 | Vesd - 電壓靜電放電空氣間隙 |
|---|---|---|---|---|---|---|
| DF2B5M4ASL,L3F |  |
ESD 保護二極體 / TVS 二極體 Bi-Dir ESD 2A; 3.6V SOD-962 (SL2) | 3.6 V | 5 V | 16 kV | 16 kV |
| DF2B6M4ASL,L3F | |
ESD 保護二極體 / TVS 二極體 Bi-Dir ESD 2A; 5.5V SOD-962 (SL2) | 5.5 V | 6.2 V | 15 kV | 15 kV |
發佈日期: 2020-04-14
| 更新日期: 2024-11-11