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Toshiba 650V DTMOS-VI Superjunction MOSFETs

Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The Toshiba 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain-source on-resistance. These devices feature a drain-source voltage of 10V.

Features

  • Low drain-source on-resistance
  • High-speed switching properties with lower capacitance
  • Enhancement mode of Vth = 3V to 4V (VDS = 10V)

Specifications

  • ±1µA maximum gate leakage current
  • Input capacitances (CISS) are 2250pF, 1635pF, and 1370pF
  • 3V to 4V maximum gate threshold voltage 

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650V功率MOSFET提供0.033Ω（典型值）低漏源導通電阻。

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DFN 8x8 Mechanical Drawing (mm)

Mechanical Drawing - Toshiba 650V DTMOS-VI Superjunction MOSFETs

TO-220SIS Mechanical Drawing (mm)

Mechanical Drawing - Toshiba 650V DTMOS-VI Superjunction MOSFETs
View Results ( 7 ) Page
零件編號 規格書 說明 Id - C連續漏極電流 Rds On - 漏-源電阻 Qg - 閘極充電 Pd - 功率消耗
TK125V65Z,LQ TK125V65Z,LQ 規格書 MOSFET MOSFET 650V 125mOhms DTMOS-VI 24 A 125 mOhms 40 nC 190 W
TK170V65Z,LQ TK170V65Z,LQ 規格書 MOSFET MOSFET 650V 170mOhms DTMOS-VI 18 A 170 mOhms 29 nC 150 W
TK110N65Z,S1F TK110N65Z,S1F 規格書 MOSFET MOSFET 650V 110mOhms DTMOS-VI 24 A 110 mOhms 40 nC 190 W
TK155A65Z,S4X TK155A65Z,S4X 規格書 MOSFET MOSFET 650V 155mOhms DTMOS-VI 18 A 155 mOhms 23 nC 40 W
TK190A65Z,S4X TK190A65Z,S4X 規格書 MOSFET MOSFET 650V 190mOhms DTMOS-VI 15 A 190 mOhms 25 nC 40 W
TK110A65Z,S4X TK110A65Z,S4X 規格書 MOSFET MOSFET 650V 110mOhms DTMOS-VI 24 A 110 mOhms 40 nC 45 W
TK210V65Z,LQ TK210V65Z,LQ 規格書 MOSFET MOSFET 650V 210mOhms DTMOS-VI 15 A 210 mOhms 25 nC 130 W
發佈日期: 2020-11-23 | 更新日期: 2024-11-26